IXFT44N50P
MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFT44N50P
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 650
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 44
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 98
nC
trⓘ - Rise Time: 200
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14
Ohm
Package:
TO268
IXFT44N50P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFT44N50P
Datasheet (PDF)
..1. Size:296K ixys
ixfh44n50p ixfk44n50p ixft44n50p.pdf 
IXFH 44N50P VDSS = 500 VPolarHVTM HiPerFETIXFK 44N50P ID25 = 44 APower MOSFETIXFT 44N50P RDS(on) 140 m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 500 VVDGR TJ = 25 C to 175 C; RGS = 1 M 500
5.1. Size:509K ixys
ixft44n50q3.pdf
Reduce The Size of Your High Power Design1000V Q3-Class HiPerFETTM Power MOSFET in SMPD Package TechnologyQ3-Class HiPerFETTM Features: Low Rdson & Qg Low Intrinsic Gate Resistance Fast Intrinsic Rectifier Excellent dV/dt Performance High Avalanche Energy Capabilities SMPD Package Features: High Speed Switching Capabilities Compact, Ultra-low Package Pr
9.1. Size:265K ixys
ixft40n85xhv ixfh40n85x.pdf
Advance Technical InformationX-Class HiPerFETTM VDSS = 850VIXFT40N85XHVPower MOSFET ID25 = 40AIXFH40N85X RDS(on) 145m N-Channel Enhancement ModeAvalanche RatedTO-268HV (IXFT)Fast Intrinsic DiodeGSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 850 V D (Tab)VDGR TJ = 25C to 150C, RGS = 1M 850 VTO-
9.2. Size:87K ixys
ixfh4n100q ixft4n100q.pdf
IXFH 4N100Q VDSS = 1000 VHiPerFETTMIXFT 4N100Q ID25 = 4 APower MOSFETsRDS(on) = 3.0 WQ-Classtrr 250 nsN-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 MW 1000 VVGS Continuous 20 VG(TAB)DVGSM Transient
9.3. Size:127K ixys
ixfh42n50p2 ixft42n50p2.pdf
Advance Technical InformationPolarP2TM HiperFETTM VDSS = 500VIXFH42N50P2ID25 = 42APower MOSFETIXFT42N50P2 RDS(on) 145m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-247 (IXFH)GDSymbol Test Conditions Maximum Ratings D (Tab)SVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C, RGS = 1M 500 VTO-268 (IXF
9.4. Size:122K ixys
ixft40n50q.pdf
Advanced Technical InformationIXFH 40N50Q VDSS = 500 VHiPerFETTMIXFT 40N50Q ID25 = 40 APower MOSFETsRDS(on) = 0.14 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500
9.5. Size:172K ixys
ixfh46n30t ixft46n30t.pdf
Advance Technical InformationTrenchTM HiperFETTM VDSS = 300VIXFH46N30TPower MOSFET ID25 = 46AIXFT46N30T RDS(on) 80m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierTO-247 (IXFH)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 300 V DD (Tab)SVDGR TJ = 25C to 150C, RGS = 1M 300 VVG
9.6. Size:50K ixys
ixfh40n30q ixft40n30q.pdf
IXFH 40N30QHiPerFETTMVDSS = 300 VIXFT 40N30QPower MOSFETs ID25 = 40 AQ-Class RDS(on) = 80 mWtrr 250 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low QgPreliminary data sheetTO-268 (IXFT) Case StyleSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 MW 300 VVGS Continuous 20 VG(TAB)VGSM Transie
9.7. Size:123K ixys
ixfh40n50q ixft40n50q.pdf
Advanced Technical InformationIXFH 40N50Q VDSS = 500 VHiPerFETTMIXFT 40N50Q ID25 = 40 APower MOSFETsRDS(on) = 0.14 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500
9.8. Size:188K ixys
ixfh400n075t2-ixft400n075t2.pdf
Advance Technical InformationTrenchT2TM HiperFETTM VDSS = 75VIXFH400N075T2ID25 = 400APower MOSFETIXFT400N075T2 RDS(on) 2.3m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-247 (IXFH)GSymbol Test Conditions Maximum RatingsDD (Tab)SVDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C, RGS = 1M 75 VVGSS Con
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