IXFT60N20 MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFT60N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 298 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Id|ⓘ - Maximum Drain Current: 60 A
Qgⓘ - Total Gate Charge: 155 nC
trⓘ - Rise Time: 250 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
Package: TO268
IXFT60N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFT60N20 Datasheet (PDF)
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Advanced Technical InformationIXFH 60N25QHiPerFETTMVDSS = 250 VIXFK 60N25QPower MOSFETs ID25 = 60 AIXFT 60N25QQ-Class RDS(on) = 47 mWtrr 250 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrLow Gate Charge and CapacitancesSymbol Test Conditions Maximum RatingsTO-247 AD (IXFH)VDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C; RGS = 1 MW 250
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