IXFT60N20 - Даташиты. Аналоги. Основные параметры

Advanced Technical Information IXFH 60N25Q HiPerFETTM VDSS = 250 V IXFK 60N25Q Power MOSFETs ID25 = 60 A IXFT 60N25Q Q-Class RDS(on) = 47 mW trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 250

VDSS = 1000 V IXFH 6N100Q HiPerFETTM ID25 = 6 A IXFT 6N100Q Power MOSFETs RDS(on) = 1.9 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 20 V VG

IXFH 69N30P VDSS = 300 V PolarHTTM HiPerFET IXFT 69N30P ID25 = 69 A Power MOSFET RDS(on) 49 m trr 200 ns N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGS Continuou