IXFT68N20
MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFT68N20
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 357
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Id|ⓘ - Maximum Drain Current: 68
A
Qgⓘ - Total Gate Charge: 280
nC
trⓘ - Rise Time: 200
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035
Ohm
Package:
TO268
IXFT68N20
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFT68N20
Datasheet (PDF)
9.1. Size:71K ixys
ixfh60n25q ixfk60n25q ixft60n25q.pdf 
Advanced Technical InformationIXFH 60N25QHiPerFETTMVDSS = 250 VIXFK 60N25QPower MOSFETs ID25 = 60 AIXFT 60N25QQ-Class RDS(on) = 47 mWtrr 250 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrLow Gate Charge and CapacitancesSymbol Test Conditions Maximum RatingsTO-247 AD (IXFH)VDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C; RGS = 1 MW 250
9.2. Size:116K ixys
ixfh6n100q ixft6n100q.pdf
VDSS = 1000 VIXFH 6N100QHiPerFETTMID25 = 6 AIXFT 6N100QPower MOSFETsRDS(on) = 1.9 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 VVG
9.3. Size:176K ixys
ixfh69n30p ixft69n30p.pdf
IXFH 69N30P VDSS = 300 VPolarHTTM HiPerFETIXFT 69N30P ID25 = 69 APower MOSFET RDS(on) 49 m trr 200 nsN-Channel Enhancement ModeFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 (IXFH)VDSS TJ = 25 C to 150 C 300 VVDGR TJ = 25 C to 150 C; RGS = 1 M 300 VVGS Continuou
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