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IXFT88N30P Spec and Replacement


   Type Designator: IXFT88N30P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 600 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 88 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 200 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO268

 IXFT88N30P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFT88N30P Specs

 ..1. Size:148K  ixys
 ixft88n30p ixfh88n30p ixfk88n30p.pdf pdf_icon

IXFT88N30P

PolarTM HiPerFETTM VDSS = 300V IXFT88N30P ID25 = 88A Power MOSFET IXFH88N30P RDS(on) 40m IXFK88N30P trr 200ns TO-268 (IXFT) N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode S Tab Symbol Test Conditions Maximum Ratings TO-247(IXFH) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C, RGS = 1M ... See More ⇒

 ..2. Size:146K  ixys
 ixfh88n30p ixft88n30p ixfk88n30p.pdf pdf_icon

IXFT88N30P

PolarTM HiPerFETTM VDSS = 300V IXFT88N30P ID25 = 88A Power MOSFET IXFH88N30P RDS(on) 40m IXFK88N30P trr 200ns TO-268 (IXFT) N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode S Tab Symbol Test Conditions Maximum Ratings TO-247(IXFH) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C, RGS = 1M ... See More ⇒

 9.1. Size:52K  ixys
 ixfh80n10q ixft80n10q.pdf pdf_icon

IXFT88N30P

IXFH 80N10Q VDSS = 100 V HiPerFETTM IXFT 80N10Q ID25 = 80 A Power MOSFETs RDS(on) = 15 mW Q-Class trr 200ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary data TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 100 V VGS Continuous 20 V VGSM Trans... See More ⇒

 9.2. Size:176K  ixys
 ixfh86n30t ixft86n30t.pdf pdf_icon

IXFT88N30P

Advance Technical Information TrenchTM HiperFETTM VDSS = 300V IXFH86N30T Power MOSFET ID25 = 86A IXFT86N30T RDS(on) 43m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 (IXFH) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 300 V D D (Tab) S VDGR TJ = 25 C to 150 C, RGS = 1M 300 V VGSS Continu... See More ⇒

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Detailed specifications: IXFT70N20Q3 , IXFT74N20 , IXFT7N90Q , IXFT80N08 , IXFT80N085 , IXFT80N10 , IXFT80N15Q , IXFT86N30T , IRFZ46N , IXFT96N20P , IXFV10N100P , IXFV10N100PS , IXFV110N10P , IXFV110N10PS , IXFV110N25T , IXFV110N25TS , IXFV12N100P .

Keywords - IXFT88N30P MOSFET specs

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