IXFT96N20P Datasheet. Specs and Replacement

Type Designator: IXFT96N20P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 600 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 96 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: TO268

IXFT96N20P substitution

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IXFT96N20P datasheet

 ..1. Size:225K  ixys
 ixfh96n20p ixft96n20p ixfv96n20p.pdf pdf_icon

IXFT96N20P

IXFH 96N20P PolarHTTM HiPerFET VDSS = 200 V IXFT 96N20P ID25 = 96 A Power MOSFET IXFV 96N20P RDS(on) 24 m trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 200 V... See More ⇒

 9.1. Size:89K  ixys
 ixft9n80q.pdf pdf_icon

IXFT96N20P

IXFH 9N80Q VDSS = 800 V HiPerFETTM IXFT 9N80Q ID25 = 9 A Power MOSFETs RDS(on) = 1.1 Q-Class N-Channel Enhancement Mode trr 250 ns Avalanche Rated Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGS Continuous 20 V VGSM Transi... See More ⇒

 9.2. Size:174K  ixys
 ixfh94n30t ixft94n30t.pdf pdf_icon

IXFT96N20P

Preliminary Technical Information TrenchTM HiperFETTM VDSS = 300V IXFT94N30T Power MOSFETs ID25 = 94A IXFH94N30T RDS(on) 36m N-Channel Enhancement Mode Avalanche Rated TO-268 (IXFT) Fast Intrinsic Rectifier G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C, RGS = 1M 300 V TO-247 (I... See More ⇒

 9.3. Size:145K  ixys
 ixfh94n30p3 ixfq94n30p3 ixft94n30p3.pdf pdf_icon

IXFT96N20P

Advance Technical Information Polar3TM HiperFETTM VDSS = 300V IXFT94N30P3 ID25 = 94A Power MOSFETs IXFQ94N30P3 RDS(on) 36m IXFH94N30P3 N-Channel Enhancement Mode TO-268 (IXFT) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 300 V G VDGR TJ = 25 C to 150 C... See More ⇒

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Detailed specifications: IXFT74N20, IXFT7N90Q, IXFT80N08, IXFT80N085, IXFT80N10, IXFT80N15Q, IXFT86N30T, IXFT88N30P, IRF830, IXFV10N100P, IXFV10N100PS, IXFV110N10P, IXFV110N10PS, IXFV110N25T, IXFV110N25TS, IXFV12N100P, IXFV12N100PS

Keywords - IXFT96N20P MOSFET specs

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