All MOSFET. IXFT96N20P Datasheet

 

IXFT96N20P Datasheet and Replacement


   Type Designator: IXFT96N20P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 600 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 96 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 200 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: TO268
 

 IXFT96N20P substitution

   - MOSFET ⓘ Cross-Reference Search

 

IXFT96N20P Datasheet (PDF)

 ..1. Size:225K  ixys
ixfh96n20p ixft96n20p ixfv96n20p.pdf pdf_icon

IXFT96N20P

IXFH 96N20PPolarHTTM HiPerFETVDSS = 200 VIXFT 96N20PID25 = 96 APower MOSFETIXFV 96N20P RDS(on) 24 m trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-247 (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 200 VVDGR TJ = 25 C to 150 C; RGS = 1 M 200 V

 9.1. Size:89K  ixys
ixft9n80q.pdf pdf_icon

IXFT96N20P

IXFH 9N80Q VDSS = 800 VHiPerFETTMIXFT 9N80Q ID25 = 9 APower MOSFETsRDS(on) = 1.1 Q-Class N-Channel Enhancement Mode trr 250 nsAvalanche Rated Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VVGS Continuous 20 VVGSM Transi

 9.2. Size:174K  ixys
ixfh94n30t ixft94n30t.pdf pdf_icon

IXFT96N20P

Preliminary Technical InformationTrenchTM HiperFETTM VDSS = 300VIXFT94N30TPower MOSFETs ID25 = 94AIXFH94N30T RDS(on) 36m N-Channel Enhancement ModeAvalanche RatedTO-268 (IXFT)Fast Intrinsic RectifierGSSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C, RGS = 1M 300 VTO-247 (I

 9.3. Size:145K  ixys
ixfh94n30p3 ixfq94n30p3 ixft94n30p3.pdf pdf_icon

IXFT96N20P

Advance Technical InformationPolar3TM HiperFETTM VDSS = 300VIXFT94N30P3ID25 = 94APower MOSFETsIXFQ94N30P3 RDS(on) 36m IXFH94N30P3N-Channel Enhancement ModeTO-268 (IXFT)Avalanche RatedFast Intrinsic RectifierGSD (Tab)TO-3P (IXFQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 VGVDGR TJ = 25C to 150C

Datasheet: IXFT74N20 , IXFT7N90Q , IXFT80N08 , IXFT80N085 , IXFT80N10 , IXFT80N15Q , IXFT86N30T , IXFT88N30P , IRF1405 , IXFV10N100P , IXFV10N100PS , IXFV110N10P , IXFV110N10PS , IXFV110N25T , IXFV110N25TS , IXFV12N100P , IXFV12N100PS .

History: AP50WN520I | CEM4282 | SVS65R280DD4TR | CEB6060L | ME7632S-G | AUIRFR5410TR | APT20F50S

Keywords - IXFT96N20P MOSFET datasheet

 IXFT96N20P cross reference
 IXFT96N20P equivalent finder
 IXFT96N20P lookup
 IXFT96N20P substitution
 IXFT96N20P replacement

 

 
Back to Top

 


 
.