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IXFV18N60P Spec and Replacement


   Type Designator: IXFV18N60P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 360 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 200 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: PLUS220

 IXFV18N60P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFV18N60P Specs

 ..1. Size:172K  ixys
 ixfh18n60p ixfv18n60p.pdf pdf_icon

IXFV18N60P

IXFH 18N60P VDSS = 600 V PolarHVTM HiPerFET IXFV 18N60P ID25 = 18 A Power MOSFET IXFV 18N60PS RDS(on) 400 m N-Channel Enhancement Mode trr 200 ns Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGS Co... See More ⇒

 9.1. Size:309K  ixys
 ixfh110n10p ixfv110n10p.pdf pdf_icon

IXFV18N60P

IXFH 110N10P VDSS = 100 V PolarHTTM HiPerFET IXFV 110N10P ID25 = 110 A Power MOSFET IXFV 110N10PS RDS(on) 15 m N-Channel Enhancement Mode trr 150 ns Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100... See More ⇒

 9.2. Size:179K  ixys
 ixfh12n90p ixfv12n90p-s.pdf pdf_icon

IXFV18N60P

Preliminary Technical Information IXFH12N90P VDSS = 900V PolarTM Power MOSFET IXFV12N90P ID25 = 12A HiPerFETTM RDS(on) 900m IXFV12N90PS trr 300ns N-Channel Enhancement Mode Avalanche Rated PLUS220 (IXFV) Fast Intrinsic Diode G Symbol Test Conditions Maximum Ratings D S VDSS TJ = 25 C to 150 C 900 V D (TAB) VDGR TJ ... See More ⇒

 9.3. Size:176K  ixys
 ixfh12n120p ixfv12n120p ixfv12n120ps.pdf pdf_icon

IXFV18N60P

IXFH12N120P VDSS = 1200V PolarTM Power MOSFET IXFV12N120P ID25 = 12A HiPerFETTM RDS(on) 1.35 IXFV12N120PS N-Channel Enhancement Mode trr 300ns Avalanche Rated Fast Intrinsic Diode PLUS220 (IXFV) G DS Symbol Test Conditions Maximum Ratings D (TAB) VDSS TJ = 25 C to 150 C 1200 V PLUS220SMD (IXFV_S) VDGR TJ = 25 C to 1... See More ⇒

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Detailed specifications: IXFV12N90P , IXFV12N90PS , IXFV14N80P , IXFV14N80PS , IXFV15N100P , IXFV15N100PS , IXFV16N80P , IXFV16N80PS , IRF540 , IXFV18N60PS , IXFV18N90P , IXFV18N90PS , IXFV20N80P , IXFV20N80PS , IXFV22N50P , IXFV22N50PS , IXFV22N60P .

Keywords - IXFV18N60P MOSFET specs

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