All MOSFET. IXFV20N80P Datasheet

 

IXFV20N80P MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFV20N80P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 86 nC
   trⓘ - Rise Time: 250 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
   Package: PLUS220

 IXFV20N80P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFV20N80P Datasheet (PDF)

 ..1. Size:326K  ixys
 ixfh20n80p ixft20n80p ixfv20n80p.pdf

IXFV20N80P IXFV20N80P

IXFH 20N80PVDSS = 800 VPolarHVTM HiPerFETIXFT 20N80PID25 = 20 APower MOSFETIXFV 20N80P RDS(on) 520 m N-Channel Enhancement ModeIXFV 20N80PStrr 250 nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsTO-247 (IXFH)VDSS TJ = 25 C to 150 C 800 VVDGR TJ = 25 C to 150 C; RG

 9.1. Size:197K  ixys
 ixfh26n60p ixft26n60p ixfv26n60p.pdf

IXFV20N80P IXFV20N80P

IXFH26N60P VDSS = 600 VPolarHVTMIXFT26N60P ID25 = 26 APower MOSFET IXFV26N60P RDS(on) 270 m N-Channel Enhancement ModeIXFV26N60PS trr 200 nsFast Recovery DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 (IXFH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGSS Contin

 9.2. Size:295K  ixys
 ixfh22n60p ixfv22n60p.pdf

IXFV20N80P IXFV20N80P

IXFH 22N60PVDSS = 600 VPolarHVTM HiPerFETIXFV 22N60PID25 = 22 APower MOSFETsIXFV 22N60PS RDS(on) 350 m N-Channel Enhancement Modetrr 200 nsFast Intrinsic DiodeAvalanche RatedTO-247 (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 60

 9.3. Size:323K  ixys
 ixfv26n50p ixfh26n50p.pdf

IXFV20N80P IXFV20N80P

IXFH 26N50P VDSS = 500 VPolarHVTM HiPerFETIXFV 26N50P ID25 = 26 APower MOSFET IXFV 26N50PS RDS(on) 230 m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 V TO-247 (IXFH)

 9.4. Size:312K  ixys
 ixfh22n50p ixfv22n50p.pdf

IXFV20N80P IXFV20N80P

IXFH 22N50P VDSS = 500 VPolarHVTM HiPerFETIXFV 22N50P ID25 = 22 APower MOSFETIXFV 22N50PS RDS(on) 270 m trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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