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IXFV96N15P Spec and Replacement


   Type Designator: IXFV96N15P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 480 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 96 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 200 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: PLUS220

 IXFV96N15P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFV96N15P Specs

 ..1. Size:318K  ixys
 ixfh96n15p ixfv96n15p.pdf pdf_icon

IXFV96N15P

IXFH 96N15P VDSS = 150 V PolarHTTM HiPerFET IXFV 96N15P ID25 = 96 A Power MOSFET IXFV 96N15PS RDS(on) 24 m trr 200 ns N-Channel Enhancement Mode Avalanche Energy Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings G D (TAB) S VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 ... See More ⇒

 7.1. Size:225K  ixys
 ixfh96n20p ixft96n20p ixfv96n20p.pdf pdf_icon

IXFV96N15P

IXFH 96N20P PolarHTTM HiPerFET VDSS = 200 V IXFT 96N20P ID25 = 96 A Power MOSFET IXFV 96N20P RDS(on) 24 m trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 200 V... See More ⇒

Detailed specifications: IXFV30N60P , IXFV30N60PS , IXFV36N50P , IXFV36N50PS , IXFV52N30P , IXFV52N30PS , IXFV74N20P , IXFV74N20PS , 2SK3878 , IXFV96N15PS , IXFV96N20P , IXFX120N25 , IXFX120N25P , IXFX120N30T , IXFX140N25T , IXFX140N30P , IXFX160N30T .

Keywords - IXFV96N15P MOSFET specs

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