IXFV96N20P Datasheet. Specs and Replacement

Type Designator: IXFV96N20P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 600 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 96 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: PLUS220

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IXFV96N20P substitution

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IXFV96N20P datasheet

 ..1. Size:225K  ixys
 ixfh96n20p ixft96n20p ixfv96n20p.pdf pdf_icon

IXFV96N20P

IXFH 96N20P PolarHTTM HiPerFET VDSS = 200 V IXFT 96N20P ID25 = 96 A Power MOSFET IXFV 96N20P RDS(on) 24 m trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 200 V... See More ⇒

 7.1. Size:318K  ixys
 ixfh96n15p ixfv96n15p.pdf pdf_icon

IXFV96N20P

IXFH 96N15P VDSS = 150 V PolarHTTM HiPerFET IXFV 96N15P ID25 = 96 A Power MOSFET IXFV 96N15PS RDS(on) 24 m trr 200 ns N-Channel Enhancement Mode Avalanche Energy Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings G D (TAB) S VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 ... See More ⇒

Detailed specifications: IXFV36N50P, IXFV36N50PS, IXFV52N30P, IXFV52N30PS, IXFV74N20P, IXFV74N20PS, IXFV96N15P, IXFV96N15PS, 2N7002, IXFX120N25, IXFX120N25P, IXFX120N30T, IXFX140N25T, IXFX140N30P, IXFX160N30T, IXFX170N20P, IXFX170N20T

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