All MOSFET. IXFX320N17T2 Datasheet

 

IXFX320N17T2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFX320N17T2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1670 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 170 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 320 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 640 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
   Package: PLUS247

 IXFX320N17T2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFX320N17T2 Datasheet (PDF)

 8.1. Size:161K  ixys
 ixfk32n80p ixfx32n80p.pdf

IXFX320N17T2 IXFX320N17T2

IXFK 32N80P VDSS = 800 VPolarHVTM HiPerFETIXFX 32N80P ID25 = 32 APower MOSFET RDS(on) 270 m N-Channel Enhancement Modetrr 250 nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsTO-264 (IXFK)VDSS TJ = 25 C to 150 C 800 VVDGR TJ = 25 C to 150 C; RGS = 1 M 800 VVGSS Contin

 8.2. Size:573K  ixys
 ixfk32n50q ixfx32n50q.pdf

IXFX320N17T2 IXFX320N17T2

VDSS ID25 RDS(on)IXFK 32N50QHiPerFETTMIXFX 32N50Q500 V 32 A 0.16 Power MOSFETs 500 V 32 A 0.16 Q-Class trr 250 ns N-Channel Enhancement ModeAvalanche Rated, Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings PLUS 247TM(IXFX)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M

 8.3. Size:124K  ixys
 ixfk32n90p ixfx32n90p.pdf

IXFX320N17T2 IXFX320N17T2

Advance Technical InformationPolarTM HiPerFETTM VDSS = 900VIXFK32N90PPower MOSFETsID25 = 32AIXFX32N90PRDS(on)

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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