IXFX32N100P Datasheet. Specs and Replacement
Type Designator: IXFX32N100P 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 960 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 300 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
Package: PLUS247
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IXFX32N100P substitution
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IXFX32N100P datasheet
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Detailed specifications: IXFX25N90, IXFX26N100P, IXFX26N120P, IXFX26N60Q, IXFX27N80Q, IXFX30N100Q2, IXFX30N110P, IXFX320N17T2, 10N65, IXFX32N100Q3, IXFX32N50, IXFX32N80P, IXFX32N80Q3, IXFX360N10T, IXFX360N15T2, IXFX38N80Q2, IXFX40N90P
Keywords - IXFX32N100P MOSFET specs
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