IXFX38N80Q2 MOSFET Datasheet: N-Ch, 800V, 38A. Full specification with pinout and replacement list

IXFX38N80Q2 Specs and Replacement

   Type Designator: IXFX38N80Q2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 735 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 38 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 250 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
   Package: PLUS247

IXFX38N80Q2 substitution

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IXFX38N80Q2 datasheet

9.1. Size:161K ixys
ixfk32n80p ixfx32n80p.pdf pdf_icon

IXFK 32N80P VDSS = 800 V PolarHVTM HiPerFET IXFX 32N80P ID25 = 32 A Power MOSFET RDS(on) 270 m N-Channel Enhancement Mode trr 250 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-264 (IXFK) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGSS Contin... See More ⇒

9.2. Size:123K ixys
ixfk30n50q ixfx30n50q.pdf pdf_icon

VDSS ID25 RDS(on) HiPerFETTM IXFK/IXFX 30N50Q 500 V 30 A 0.16 Power MOSFETs IXFK/IXFX 32N50Q 500 V 32 A 0.15 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS... See More ⇒

9.3. Size:573K ixys
ixfk32n50q ixfx32n50q.pdf pdf_icon

VDSS ID25 RDS(on) IXFK 32N50Q HiPerFETTM IXFX 32N50Q 500 V 32 A 0.16 Power MOSFETs 500 V 32 A 0.16 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M ... See More ⇒

9.4. Size:124K ixys
ixfk32n90p ixfx32n90p.pdf pdf_icon