All MOSFET. IXFX38N80Q2 Datasheet

 

IXFX38N80Q2 MOSFET. Datasheet pdf. Equivalent

Type Designator: IXFX38N80Q2

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 735 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 38 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 190 nC

Rise Time (tr): 250 nS

Maximum Drain-Source On-State Resistance (Rds): 0.22 Ohm

Package: PLUS247

IXFX38N80Q2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IXFX38N80Q2 Datasheet (PDF)

5.1. ixfk34n80 ixfx34n80.pdf Size:48K _ixys

IXFX38N80Q2
IXFX38N80Q2

HiPerFETTM IXFK 34N80 VDSS = 800 V IXFX 34N80 ID25 = 34 A Power MOSFETs RDS(on) = 0.24 W Single MOSFET Die trr ? 250 ns Avalanche Rated Preliminary data sheet Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C; RGS = 1 MW 800 V (TAB) G VGS Continuous 20 V D VGSM Transient 30 V ID25 TC = 25C34 A TO-264 AA (IXFK) IDM T

5.2. ixfk32n80p ixfx32n80p.pdf Size:161K _ixys

IXFX38N80Q2
IXFX38N80Q2

IXFK 32N80P VDSS = 800 V PolarHVTM HiPerFET IXFX 32N80P ID25 = 32 A Power MOSFET ? ? RDS(on) ? 270 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 250 ns ? ? ? Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-264 (IXFK) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 800 V VGSS Continuous 30 V VGSM Transient 40 V G D

 5.3. ixfk32n50q ixfx32n50q.pdf Size:573K _ixys

IXFX38N80Q2
IXFX38N80Q2

VDSS ID25 RDS(on) IXFK 32N50Q HiPerFETTM IXFX 32N50Q Ω 500 V 32 A 0.16 Ω Ω Ω Power MOSFETs Ω Ω 500 V 32 A 0.16 Ω Ω Ω Ω Q-Class ≤ trr ≤ ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

5.4. ixfk32n90p ixfx32n90p.pdf Size:124K _ixys

IXFX38N80Q2
IXFX38N80Q2

Advance Technical Information PolarTM HiPerFETTM VDSS = 900V IXFK32N90P Power MOSFETs ID25 = 32A IXFX32N90P Ω RDS(on) < 300mΩ Ω Ω Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXFK) Symbol Test Conditions Maximum Ratings G D VDSS TJ = 25°C to 150°C 900 V S VDGR TJ = 25°C to 150°C, RGS = 1MΩ 900 V Tab VGSS Continuous ±30 V VGSM Tr

 5.5. ixfk30n50q ixfx30n50q.pdf Size:123K _ixys

IXFX38N80Q2
IXFX38N80Q2

VDSS ID25 RDS(on) HiPerFETTM IXFK/IXFX 30N50Q Ω 500 V 30 A 0.16 Ω Ω Ω Power MOSFETs Ω IXFK/IXFX 32N50Q Ω 500 V 32 A 0.15 Ω Ω Ω Ω Q-Class ≤ trr ≤ ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS

Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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