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IXFX44N50Q Spec and Replacement


   Type Designator: IXFX44N50Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 481 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 44 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 190 nC
   tr ⓘ - Rise Time: 250 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: PLUS247

 IXFX44N50Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFX44N50Q Specs

 ..1. Size:574K  ixys
ixfk48n50q ixfx48n50q ixfk44n50q ixfx44n50q.pdf pdf_icon

IXFX44N50Q

VDSS ID25 RDS(on) HiPerFETTM IXFK/IXFX 48N50Q 500 V 48 A 100 m Power MOSFETs IXFK/IXFX 44N50Q 500 V 44 A 120 m Q-CLASS trr 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg PLUS 247TM (IXFX) High dV/dt, Low trr Symbol Test Conditions Maximum Ratings (TAB) G D VDSS TJ = 25 C to 150... See More ⇒

 5.1. Size:126K  ixys
ixfx44n50f ixfk44n50f.pdf pdf_icon

IXFX44N50Q

HiPerRFTM VDSS = 500V IXFK44N50F ID25 = 44A Power MOSFETs IXFX44N50F RDS(on) 120m F-Class MegaHertz Switching trr 250ns Single MOSFET Die TO-264 (IXFK) N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr G D Tab S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C ... See More ⇒

 6.1. Size:100K  ixys
ixfx44n55q.pdf pdf_icon

IXFX44N50Q

Advance Technical Information IXFK 44N55Q VDSS = 550 V HiPerFETTM IXFX 44N55Q ID25 = 44 A Power MOSFETs RDS(on) = 120 m Q-CLASS trr 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg PLUS 247TM (IXFX) High dV/dt, Low t rr Symbol Test Conditions Maximum Ratings (TAB) G D VDSS TJ = 25 C to 150 C 550 ... See More ⇒

 7.1. Size:233K  ixys
ixfk44n80p ixfx44n80p.pdf pdf_icon

IXFX44N50Q

PolarTM IXFK44N80P VDSS = 800V HiperFETTM ID25 = 44A IXFX44N80P Power MOSFET RDS(on) 190m N-Channel Enhancement Mode TO-264 (IXFK) Avalanche Rated Fast Intrinsic Diode G D S Symbol Test Conditions Maximum Ratings Tab VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C, RGS = 1M 800 V PLUS247 (IXFX) VGSS Continuous 30... See More ⇒

Detailed specifications: IXFX32N80P , IXFX32N80Q3 , IXFX360N10T , IXFX360N15T2 , IXFX38N80Q2 , IXFX40N90P , IXFX420N10T , IXFX44N50F , 2N60 , IXFX44N80P , IXFX44N80Q3 , IXFX48N55 , IXFX48N60P , IXFX48N60Q3 , IXFX520N075T2 , IXFX52N60Q2 , IXFX55N50F .

Keywords - IXFX44N50Q MOSFET specs

 IXFX44N50Q cross reference
 IXFX44N50Q equivalent finder
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