IXFX52N60Q2 MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFX52N60Q2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 735 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 52 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 198 nC
trⓘ - Rise Time: 250 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
Package: PLUS247
IXFX52N60Q2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFX52N60Q2 Datasheet (PDF)
ixfk520n075t2 ixfx520n075t2.pdf
Advance Technical InformationTrenchT2TM GigaMOSTMVDSS = 75VIXFK520N075T2HiperFETTMID25 = 520AIXFX520N075T2 Power MOSFET RDS(on) 2.2m N-Channel Enhancement ModeAvalanche Rated TO-264 (IXFK)Fast Intrinsic DiodeSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 175C75 V TabDSVDGR TJ = 25C to 175C, RGS = 1M 75 VV
ixfx50n50 ixfx55n50.pdf
VDSS ID25 RDS(on)HiPerFETTMIXFX 50N50 500 V 50 A 100 mPower MOSFETsIXFX 55N50 500 V 55 A 80 m trr 250 ns Single Die MOSFETPreliminary data sheetSymbol Test Conditions Maximum Ratings PLUS 247TM(IXFX)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 20 VVGSM
ixfk55n50 ixfx55n50 ixfn55n50.pdf
VDSS = 500 VIXFK 55N50HiPerFETTMID25 = 55 AIXFX 55N50Power MOSFETRDS(on) = 90mIXFN 55N50 250 nstrr Single Die MOSFETSymbol Test Conditions Maximum RatingsPLUS247(IXFX)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C 500 VVGSS Continuous 20 VVGSM Transient 30 V(TAB)GCID25 TC = 25C55 AEIDM TC = 2
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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