All MOSFET. IXFX74N50P2 Datasheet

 

IXFX74N50P2 Datasheet and Replacement


   Type Designator: IXFX74N50P2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1400 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 74 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 250 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.077 Ohm
   Package: PLUS247
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IXFX74N50P2 Datasheet (PDF)

 ..1. Size:127K  ixys
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IXFX74N50P2

Advance Technical InformationPolarP2TM HiPerFETTM VDSS = 500VIXFK74N50P2Power MOSFET ID25 = 74AIXFX74N50P2 RDS(on) 77m trr 250nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-264 (IXFK)Symbol Test Conditions Maximum RatingsGDVDSS TJ = 25C to 150C 500 VSVDGR TJ = 25C to 150C, RGS

 9.1. Size:133K  ixys
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IXFX74N50P2

Preliminary Technical InformationPolar3TM HiPerFETTM VDSS = 500VIXFK78N50P3Power MOSFETs ID25 = 78AIXFX78N50P3 RDS(on) 68m trr 250nsN-Channel Enhancement ModeAvalanche RatedTO-264 (IXFK)Fast Intrinsic DiodeGDSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 500 V TabVDGR TJ = 25C

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History: BR70N06 | NCE30P12BS | NP180N04TUJ | SSW65R190S2 | SRT10N160LD | SM4186T9RL | APT10021JFLL

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