All MOSFET. IXFX88N20Q Datasheet

 

IXFX88N20Q Datasheet and Replacement


   Type Designator: IXFX88N20Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 88 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 200 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: PLUS247
 
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IXFX88N20Q Datasheet (PDF)

 9.1. Size:230K  ixys
 ixfk80n50p ixfx80n50p.pdf pdf_icon

IXFX88N20Q

IXFK 80N50P VDSS = 500 VPolarHVTM HiPerFETIXFX 80N50P ID25 = 80 APower MOSFET RDS(on) 65 m trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum Ratings TO-264 (IXFK)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGSM Transient

Datasheet: IXFX64N60Q3 , IXFX66N50Q2 , IXFX73N30Q , IXFX74N50P2 , IXFX78N50P3 , IXFX80N50P , IXFX80N50Q3 , IXFX80N60P3 , 5N50 , IXFX94N50P2 , IXFX98N50P3 , IXFZ140N25T , IXFZ520N075T2 , IXKC13N80C , IXKC15N60C5 , IXKC19N60C5 , IXKC20N60C .

History: PJQ2888 | HSM3107 | MMN4336

Keywords - IXFX88N20Q MOSFET datasheet

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