All MOSFET. IXFX88N20Q Datasheet

 

IXFX88N20Q MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFX88N20Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 88 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 146 nC
   trⓘ - Rise Time: 200 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: PLUS247

 IXFX88N20Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFX88N20Q Datasheet (PDF)

 9.1. Size:230K  ixys
 ixfk80n50p ixfx80n50p.pdf

IXFX88N20Q IXFX88N20Q

IXFK 80N50P VDSS = 500 VPolarHVTM HiPerFETIXFX 80N50P ID25 = 80 APower MOSFET RDS(on) 65 m trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum Ratings TO-264 (IXFK)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGSM Transient

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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