IXKC19N60C5 Datasheet. Specs and Replacement
Type Designator: IXKC19N60C5
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 132 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 19 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 430 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: ISOPLUS220
IXKC19N60C5 substitution
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IXKC19N60C5 datasheet
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Detailed specifications: IXFX80N60P3, IXFX88N20Q, IXFX94N50P2, IXFX98N50P3, IXFZ140N25T, IXFZ520N075T2, IXKC13N80C, IXKC15N60C5, 20N60, IXKC20N60C, IXKC23N60C5, IXKC25N80C, IXKC40N60C, IXKF40N60SCD1, IXKH20N60C5, IXKH24N60C5, IXKH30N60C5
Keywords - IXKC19N60C5 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: IXTA160N085T | IXTA182N055T | IXTA1N80 | IXKC23N60C5
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