IXKH30N60C5 Datasheet and Replacement
Type Designator: IXKH30N60C5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 310 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 430 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: TO247
IXKH30N60C5 substitution
IXKH30N60C5 Datasheet (PDF)
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Datasheet: IXKC19N60C5 , IXKC20N60C , IXKC23N60C5 , IXKC25N80C , IXKC40N60C , IXKF40N60SCD1 , IXKH20N60C5 , IXKH24N60C5 , IRFP260N , IXKH35N60C5 , IXKH47N60C , IXKH70N60C5 , IXKK85N60C , IXKN40N60C , IXKN45N80C , IXKN75N60C , IXKP10N60C5 .
History: SSFM1022
Keywords - IXKH30N60C5 MOSFET datasheet
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History: SSFM1022
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