IXKH30N60C5 MOSFET. Datasheet pdf. Equivalent

Type Designator: IXKH30N60C5

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 310 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 30 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 53 nC

Rise Time (tr): 430 nS

Maximum Drain-Source On-State Resistance (Rds): 0.125 Ohm

Package: TO247

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