IXKN75N60C Datasheet and Replacement
Type Designator: IXKN75N60C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 560 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 580 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
Package: SOT227B
IXKN75N60C substitution
IXKN75N60C Datasheet (PDF)
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Datasheet: IXKH24N60C5 , IXKH30N60C5 , IXKH35N60C5 , IXKH47N60C , IXKH70N60C5 , IXKK85N60C , IXKN40N60C , IXKN45N80C , IRFB4227 , IXKP10N60C5 , IXKP10N60C5M , IXKP13N60C5 , IXKP13N60C5M , IXKP20N60C5 , IXKP20N60C5M , IXKP24N60C5 , IXKP24N60C5M .
History: SWD051R08ES | 2SK788
Keywords - IXKN75N60C MOSFET datasheet
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History: SWD051R08ES | 2SK788
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