IXKP10N60C5 PDF Specs and Replacement
Type Designator: IXKP10N60C5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 109 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 260 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.385 Ohm
Package: TO220
IXKP10N60C5 substitution
IXKP10N60C5 PDF Specs
ixkp13n60c5m.pdf
IXKP 13N60C5M ID25 = 6.5 A CoolMOS 1) Power MOSFET VDSS = 600 V RDS(on) max = 0.3 Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET D TO-220 FP Ultra low gate charge G D G S Preliminary data S Features MOSFET fast CoolMOS 1) power MOSFET Symbol Conditions Maximum Ratings 4th generation VDSS TVJ = 25 C 600 V - High blocking capabi... See More ⇒
Detailed specifications: IXKH30N60C5 , IXKH35N60C5 , IXKH47N60C , IXKH70N60C5 , IXKK85N60C , IXKN40N60C , IXKN45N80C , IXKN75N60C , AON6414A , IXKP10N60C5M , IXKP13N60C5 , IXKP13N60C5M , IXKP20N60C5 , IXKP20N60C5M , IXKP24N60C5 , IXKP24N60C5M , IXKR25N80C .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
