All MOSFET. IXKP10N60C5 Datasheet

 

IXKP10N60C5 Datasheet and Replacement


   Type Designator: IXKP10N60C5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 109 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 260 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.385 Ohm
   Package: TO220
 

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IXKP10N60C5 Datasheet (PDF)

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IXKP10N60C5

IXKP 13N60C5MID25 = 6.5 ACoolMOS 1) Power MOSFETVDSS = 600 VRDS(on) max = 0.3 Fully isolated packageN-Channel Enhancement ModeLow RDSon, High VDSS MOSFETDTO-220 FPUltra low gate chargeGDGSPreliminary dataSFeaturesMOSFET fast CoolMOS 1) power MOSFETSymbol Conditions Maximum Ratings4th generationVDSS TVJ = 25C 600 V - High blocking capabi

Datasheet: IXKH30N60C5 , IXKH35N60C5 , IXKH47N60C , IXKH70N60C5 , IXKK85N60C , IXKN40N60C , IXKN45N80C , IXKN75N60C , P55NF06 , IXKP10N60C5M , IXKP13N60C5 , IXKP13N60C5M , IXKP20N60C5 , IXKP20N60C5M , IXKP24N60C5 , IXKP24N60C5M , IXKR25N80C .

History: APQ65SN06AD

Keywords - IXKP10N60C5 MOSFET datasheet

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