IXKP10N60C5 Datasheet and Replacement
Type Designator: IXKP10N60C5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 109 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 17 nC
tr ⓘ - Rise Time: 260 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.385 Ohm
Package: TO220
IXKP10N60C5 substitution
IXKP10N60C5 Datasheet (PDF)
9.1. Size:100K ixys
ixkp13n60c5m.pdf
ixkp13n60c5m.pdf
IXKP 13N60C5MID25 = 6.5 ACoolMOS 1) Power MOSFETVDSS = 600 VRDS(on) max = 0.3 Fully isolated packageN-Channel Enhancement ModeLow RDSon, High VDSS MOSFETDTO-220 FPUltra low gate chargeGDGSPreliminary dataSFeaturesMOSFET fast CoolMOS 1) power MOSFETSymbol Conditions Maximum Ratings4th generationVDSS TVJ = 25C 600 V - High blocking capabi
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