IXKP20N60C5M PDF Specs and Replacement
Type Designator: IXKP20N60C5M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 340 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO220
IXKP20N60C5M substitution
IXKP20N60C5M PDF Specs
ixkp20n60c5m.pdf
IXKP 20N60C5M ID25 = 7.6 A CoolMOS 1) Power MOSFET VDSS = 600 V RDS(on) max = 0.2 Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET D TO-220 FP Ultra low gate charge G D G S Preliminary data S Features MOSFET fast CoolMOS 1) power MOSFET Symbol Conditions Maximum Ratings 4th generation VDSS TVJ = 25 C 600 V - High blocking capabi... See More ⇒
ixkp20n60c5.pdf
isc N-Channel MOSFET Transistor IXKP20N60C5 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 180m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switched mode power supplies Uninterruptible power suppli... See More ⇒
Detailed specifications: IXKN40N60C , IXKN45N80C , IXKN75N60C , IXKP10N60C5 , IXKP10N60C5M , IXKP13N60C5 , IXKP13N60C5M , IXKP20N60C5 , 7N65 , IXKP24N60C5 , IXKP24N60C5M , IXKR25N80C , IXKR40N60C , IXKR47N60C5 , IXTA05N100 , IXTA05N100P , IXTA06N120P .
Keywords - IXKP20N60C5M MOSFET specs
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