IXKP20N60C5M Datasheet. Specs and Replacement

Type Designator: IXKP20N60C5M  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 340 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO220

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IXKP20N60C5M datasheet

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IXKP20N60C5M

IXKP 20N60C5M ID25 = 7.6 A CoolMOS 1) Power MOSFET VDSS = 600 V RDS(on) max = 0.2 Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET D TO-220 FP Ultra low gate charge G D G S Preliminary data S Features MOSFET fast CoolMOS 1) power MOSFET Symbol Conditions Maximum Ratings 4th generation VDSS TVJ = 25 C 600 V - High blocking capabi... See More ⇒

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IXKP20N60C5M

isc N-Channel MOSFET Transistor IXKP20N60C5 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 180m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switched mode power supplies Uninterruptible power suppli... See More ⇒

Detailed specifications: IXKN40N60C, IXKN45N80C, IXKN75N60C, IXKP10N60C5, IXKP10N60C5M, IXKP13N60C5, IXKP13N60C5M, IXKP20N60C5, 7N65, IXKP24N60C5, IXKP24N60C5M, IXKR25N80C, IXKR40N60C, IXKR47N60C5, IXTA05N100, IXTA05N100P, IXTA06N120P

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