All MOSFET. IXKP20N60C5M Datasheet

 

IXKP20N60C5M Datasheet and Replacement


   Type Designator: IXKP20N60C5M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 7.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 340 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO220
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IXKP20N60C5M Datasheet (PDF)

 ..1. Size:101K  ixys
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IXKP20N60C5M

IXKP 20N60C5MID25 = 7.6 ACoolMOS 1) Power MOSFETVDSS = 600 VRDS(on) max = 0.2 Fully isolated packageN-Channel Enhancement ModeLow RDSon, High VDSS MOSFETDTO-220 FPUltra low gate chargeGDGSPreliminary dataSFeaturesMOSFET fast CoolMOS 1) power MOSFETSymbol Conditions Maximum Ratings4th generationVDSS TVJ = 25C 600 V - High blocking capabi

 3.1. Size:272K  inchange semiconductor
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IXKP20N60C5M

isc N-Channel MOSFET Transistor IXKP20N60C5FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 180m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitched mode power suppliesUninterruptible power suppli

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History: STH270N4F3-6 | HLML6401 | BLF888A | WMF05N70MM | HF12N60 | APT1001R2AN | AP85T03GH-HF

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