All MOSFET. IXKR25N80C Datasheet

 

IXKR25N80C Datasheet and Replacement


   Type Designator: IXKR25N80C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: ISOPLUS247
 

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IXKR25N80C Datasheet (PDF)

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IXKR25N80C

Advanced Technical InformationIXKR 25N80C ID25 = 25 ACoolMOS 1) Power MOSFETVDSS = 800 Vin ISOPLUS247 PackageRDS(on) = 125 mWN-Channel Enhancement ModeLow RDSon, High VDSS MOSFETDISOPLUS 247Package with Electrically Isolated BaseGGE153432DSSG = Gate, D = Drain, S = SourceFeaturesMOSFET ISOPLUS247 package with DCB BaseSymbol Conditions M

Datasheet: IXKP10N60C5 , IXKP10N60C5M , IXKP13N60C5 , IXKP13N60C5M , IXKP20N60C5 , IXKP20N60C5M , IXKP24N60C5 , IXKP24N60C5M , K3569 , IXKR40N60C , IXKR47N60C5 , IXTA05N100 , IXTA05N100P , IXTA06N120P , IXTA08N100D2 , IXTA08N100P , IXTA08N120P .

History: AP9920GEO | IPB80N04S2-H4 | SI7463ADP | AP95T06BGP | AM7423P | DMN2020UFCL | DMP31D0U

Keywords - IXKR25N80C MOSFET datasheet

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