IXKR25N80C Datasheet. Specs and Replacement

Type Designator: IXKR25N80C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: ISOPLUS247

IXKR25N80C substitution

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IXKR25N80C datasheet

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IXKR25N80C

Advanced Technical Information IXKR 25N80C ID25 = 25 A CoolMOS 1) Power MOSFET VDSS = 800 V in ISOPLUS247 Package RDS(on) = 125 mW N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET D ISOPLUS 247 Package with Electrically Isolated Base G G E153432 D S S G = Gate, D = Drain, S = Source Features MOSFET ISOPLUS247 package with DCB Base Symbol Conditions M... See More ⇒

Detailed specifications: IXKP10N60C5, IXKP10N60C5M, IXKP13N60C5, IXKP13N60C5M, IXKP20N60C5, IXKP20N60C5M, IXKP24N60C5, IXKP24N60C5M, IRF9540, IXKR40N60C, IXKR47N60C5, IXTA05N100, IXTA05N100P, IXTA06N120P, IXTA08N100D2, IXTA08N100P, IXTA08N120P

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.