IXKR40N60C Datasheet. Specs and Replacement

Type Designator: IXKR40N60C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 280 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 38 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: ISOPLUS247

IXKR40N60C substitution

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IXKR40N60C datasheet

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Detailed specifications: IXKP10N60C5M, IXKP13N60C5, IXKP13N60C5M, IXKP20N60C5, IXKP20N60C5M, IXKP24N60C5, IXKP24N60C5M, IXKR25N80C, AON7408, IXKR47N60C5, IXTA05N100, IXTA05N100P, IXTA06N120P, IXTA08N100D2, IXTA08N100P, IXTA08N120P, IXTA08N50D2

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