All MOSFET. IXTA05N100P Datasheet

 

IXTA05N100P Datasheet and Replacement


   Type Designator: IXTA05N100P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Id|ⓘ - Maximum Drain Current: 0.5 A
   trⓘ - Rise Time: 750 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 30 Ohm
   Package: TO263
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IXTA05N100P Datasheet (PDF)

 4.1. Size:185K  ixys
 ixta05n100hv.pdf pdf_icon

IXTA05N100P

VDSS = 1000VIXTA05N100HVHigh VoltageID25 = 750mAIXTA05N100Power MOSFET RDS(on) 17 IXTP05N100N-Channel Enhancement ModeTO-263HV (IXTA)Avalanche RatedGSD (Tab)Symbol Test Conditions Maximum RatingsTO-263 AA (IXTA)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Continuous 30 V GS

 9.1. Size:177K  ixys
 ixty08n100d2-ixta08n100d2-ixtp08n100d2.pdf pdf_icon

IXTA05N100P

Preliminary Technical InformationDepletion Mode VDSX = 1000VIXTY08N100D2MOSFET ID(on) > 800mAIXTA08N100D2 RDS(on) 21 IXTP08N100D2N-ChannelTO-252 (IXTY)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-263 AA (IXTA)VDSX TJ = 25C to 150C 1000 VVGSX Continuous 20 VVGSM Transient 30 VGSPD TC = 25C60 WD (Tab)TJ -

 9.2. Size:270K  ixys
 ixty08n100d2 ixta08n100d2 ixtp08n100d2.pdf pdf_icon

IXTA05N100P

Depletion Mode VDSX = 1000VIXTY08N100D2MOSFET ID(on) > 800mAIXTA08N100D2 RDS(on) 21 IXTP08N100D2N-ChannelDTO-252 (IXTY)GSGD (Tab)STO-263 AA (IXTA)Symbol Test Conditions Maximum RatingsGVDSX TJ = 25C to 150C 1000 VSD (Tab)VGSX Continuous 20 VVGSM Transient 30 VTO-220AB (IXTP)PD TC = 25C60 WTJ

 9.3. Size:186K  ixys
 ixta08n100d2hv.pdf pdf_icon

IXTA05N100P

Advance Technical InformationHigh Voltage VDSX = 1000VIXTA08N100D2HVDepletion Mode ID(on) > 800mAMOSFET RDS(on) 21 N-ChannelTO-263HVGSSymbol Test Conditions Maximum Ratings D (Tab)VDSX TJ = 25C to 150C 1000 VVDGX TJ = 25C to 150C, RGS = 1M 1000 VG = Gate D = DrainVGSX Continuous 20 VS = Source Tab = Drain

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Keywords - IXTA05N100P MOSFET datasheet

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