IXTA08N120P MOSFET. Datasheet pdf. Equivalent
Type Designator: IXTA08N120P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 0.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14 nC
trⓘ - Rise Time: 900 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 25 Ohm
Package: TO263
IXTA08N120P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXTA08N120P Datasheet (PDF)
ixty08n100d2-ixta08n100d2-ixtp08n100d2.pdf
Preliminary Technical InformationDepletion Mode VDSX = 1000VIXTY08N100D2MOSFET ID(on) > 800mAIXTA08N100D2 RDS(on) 21 IXTP08N100D2N-ChannelTO-252 (IXTY)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-263 AA (IXTA)VDSX TJ = 25C to 150C 1000 VVGSX Continuous 20 VVGSM Transient 30 VGSPD TC = 25C60 WD (Tab)TJ -
ixty08n100d2 ixta08n100d2 ixtp08n100d2.pdf
Depletion Mode VDSX = 1000VIXTY08N100D2MOSFET ID(on) > 800mAIXTA08N100D2 RDS(on) 21 IXTP08N100D2N-ChannelDTO-252 (IXTY)GSGD (Tab)STO-263 AA (IXTA)Symbol Test Conditions Maximum RatingsGVDSX TJ = 25C to 150C 1000 VSD (Tab)VGSX Continuous 20 VVGSM Transient 30 VTO-220AB (IXTP)PD TC = 25C60 WTJ
ixta08n100d2hv.pdf
Advance Technical InformationHigh Voltage VDSX = 1000VIXTA08N100D2HVDepletion Mode ID(on) > 800mAMOSFET RDS(on) 21 N-ChannelTO-263HVGSSymbol Test Conditions Maximum Ratings D (Tab)VDSX TJ = 25C to 150C 1000 VVDGX TJ = 25C to 150C, RGS = 1M 1000 VG = Gate D = DrainVGSX Continuous 20 VS = Source Tab = Drain
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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