IXTA160N075T7 Datasheet. Specs and Replacement

Type Designator: IXTA160N075T7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 360 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO263

IXTA160N075T7 substitution

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IXTA160N075T7 datasheet

 ..1. Size:197K  ixys
ixta160n075t7.pdf pdf_icon

IXTA160N075T7

Preliminary Technical Information VDSS = 75 V IXTA160N075T7 TrenchMVTM ID25 = 160 A Power MOSFET RDS(on) 6.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V VGSM Transient 20 V 1 ID25 TC = 25 ... See More ⇒

 2.1. Size:174K  ixys
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IXTA160N075T7

Preliminary Technical Information IXTA160N075T VDSS = 75 V TrenchMVTM IXTP160N075T ID25 = 160 A Power MOSFET RDS(on) 6.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V G VGSM Transient 20 V S D (TAB) ID25 TC = 25 C 16... See More ⇒

 5.1. Size:204K  ixys
ixta160n04t2 ixtp160n04t2.pdf pdf_icon

IXTA160N075T7

Preliminary Technical Information IXTA160N04T2 VDSS = 40V TrenchT2TM IXTP160N04T2 ID25 = 160A Power MOSFET RDS(on) 5m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C40 V S VDGR TJ = 25 C to 175 C, RGS = 1M 40 V (TAB) VGSM Transient 20 V TO-220 (IXTP) ID25 TC ... See More ⇒

 6.1. Size:164K  ixys
ixta160n10t7.pdf pdf_icon

IXTA160N075T7

Preliminary Technical Information VDSS = 100 V IXTA160N10T7 TrenchMVTM ID25 = 160 A Power MOSFET RDS(on) 7.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGSM Transient 30 V 1 ID25 TC = 25 C 160 A ... See More ⇒

Detailed specifications: IXTA140N055T2, IXTA140P05T, IXTA14N60P, IXTA152N085T, IXTA152N085T7, IXTA15P15T, IXTA160N04T2, IXTA160N075T, 2SK3568, IXTA160N085T, IXTA160N10T, IXTA160N10T7, IXTA16N50P, IXTA170N075T2, IXTA180N085T, IXTA180N085T7, IXTA180N10T

Keywords - IXTA160N075T7 MOSFET specs

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