IXTA240N055T MOSFET. Datasheet pdf. Equivalent
Type Designator: IXTA240N055T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 480 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 240 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 170 nC
trⓘ - Rise Time: 70 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
Package: TO263
IXTA240N055T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXTA240N055T Datasheet (PDF)
ixta240n055t ixtp240n055t.pdf
Preliminary Technical InformationIXTA240N055T VDSS = 55 VTrenchMVTMIXTP240N055T ID25 = 240 APower MOSFET RDS(on) 3.6 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25C to 175C55 VVDGR TJ = 25C to 175C; RGS = 1 M 55 VGVGSM Transient 20 VS(TAB)ID25 TC = 25C 2
ixta240n055t7.pdf
Preliminary Technical InformationVDSS = 55 VIXTA240N055T7TrenchMVTMID25 = 240 APower MOSFET RDS(on) 3.6 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25C to 175C55 VVDGR TJ = 25C to 175C; RGS = 1 M 55 VVGSM Transient 20 V1ID25 TC = 25C 240 A 7
ixta200n075t7.pdf
Preliminary Technical InformationVDSS = 75 VIXTA200N075T7TrenchMVTMID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25 C to 175 C75 VVDGR TJ = 25 C to 175 C; RGS = 1 M 75 VVGSM Transient 20 V1ID25 TC = 25
ixta220n055t ixtp220n055t.pdf
Preliminary Technical InformationIXTA220N055T VDSS = 55 VTrenchMVTMIXTP220N055T ID25 = 220 APower MOSFET RDS(on) 4.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VGVGSM Transient 20 VS(TAB)ID25 T
ixta220n075t ixtp220n075t.pdf
Preliminary Technical InformationIXTA220N075T VDSS = 75 VTrenchMVTMIXTP220N075T ID25 = 220 APower MOSFET RDS(on) 4.5 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C; RGS = 1 M 75 VGVGSM Transient 20 VS(TAB)ID25 TC = 25C 2
ixta20n65x ixth20n65x ixtp20n65x.pdf
Preliminary Technical InformationX-Class VDSS = 650VIXTA20N65XPower MOSFET ID25 = 20AIXTP20N65X RDS(on) 210m IXTH20N65XN-Channel Enhancement ModeTO-263 (IXTA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VVG
ixta260n055t2 ixtp260n055t2.pdf
TrenchT2TM IXTA260N055T2 VDSS = 55V IXTP260N055T2 ID25 = 260A Power MOSFET RDS(on) 3.3m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25C to 175C 55 V S (TAB) VDGR TJ = 25C to 175C, RGS = 1M 55 VVGSM Transient 20 V TO-220 (IXTP) ID25 TC = 25C 260 AILRM
ixta2n80 ixtp2n80.pdf
VDSS = 800 VHigh Voltage MOSFET IXTA 2N80ID25 = 2 AIXTP 2N80 RDS(on) = 6.2 N-Channel Enhancement ModeAvalanche Energy RatedPreliminary DataSymbol Test Conditions Maximum Ratings TO-220AB (IXTP)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VVGS Continuous 20 VD (TAB)GVGSM Transient 30 VDSID25 TC = 25C2 A
ixta200n085t ixtp200n085t.pdf
Preliminary Technical InformationIXTA 200N085T VDSS = 85 VTrenchMVTMIXTP 200N085T ID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VGVGSM Transient 20 VS(TAB)ID25
ixta2n100 ixtp2n100.pdf
High Voltage VDSS = 1000 VIXTA 2N100MOSFET ID25 = 2 AIXTP 2N100RDS(on) = 7 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-220AB (IXTP)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 VD (TAB)GVGSM Transient 30 VDSID25 TC = 25C2 AIDM TC = 25C, pulse width limited by
ixta200n085t7.pdf
Preliminary Technical InformationVDSS = 85 VIXTA200N085T7TrenchMVTMID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25C to 175C85 VVDGR TJ = 25C to 175C; RGS = 1 M 85 VVGSM Transient 20 V1ID25 TC = 25C 200 A 7
ixta270n04t4 ixth270n04t4 ixtp270n04t4.pdf
Advance Technical InformationVDSS = 40VTrenchT4TMIXTA270N04T4ID25 = 270APower MOSFET IXTP270N04T4 RDS(on) 2.4m IXTH270N04T4N-Channel Enhancement ModeTO-263 AA (IXTA)Avalanche RatedGSD (Tab)TO-220AB (IXTP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C40 VGDD (Tab)SVDGR TJ = 25C to 175C, RG
ixta26p20p ixth26p20p ixtp26p20p ixtq26p20p.pdf
Preliminary Technical InformationIXTA26P20P VDSS = - 200VPolarPTMIXTH26P20P ID25 = - 26APower MOSFET IXTP26P20P RDS(on) 170m P-Channel Enhancement ModeAvalanche RatedIXTQ26P20PTO-263 (IXTA) TO-247 (IXTH) TO-220 (IXTP)GSGD(TAB)D(TAB)GD(TAB)DS DSSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25C to 175
ixta230n075t2 ixtp230n075t2.pdf
TrenchT2TM VDSS = 75VIXTA230N075T2ID25 = 230APower MOSFETIXTP230N075T2 RDS(on) 4.2m N-Channel Enhancement ModeAvalanche Rated TO-263 (IXTA)GSD (Tab)TO-220 (IXTP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C, RGS = 1M 75 VVGSM Transient 20 VGDSID25 TC = 25C 2
ixta220n075t7.pdf
Preliminary Technical InformationVDSS = 75 VIXTA220N075T7TrenchMVTMID25 = 220 APower MOSFET RDS(on) 4.5 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C; RGS = 1 M 75 VVGSM Transient 20 V1ID25 TC = 25C 220 A 7
ixta220n055t7.pdf
Preliminary Technical InformationVDSS = 55 VIXTA220N055T7TrenchMVTMID25 = 220 APower MOSFET RDS(on) 4.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VVGSM Transient 20 V1ID25 TC = 25
ixta200n075t ixtp200n075t.pdf
Preliminary Technical InformationIXTA200N075TVDSS = 75 VTrenchMVTMIXTP200N075TID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C75 VVDGR TJ = 25 C to 175 C; RGS = 1 M 75 VGVGSM Transient 20 VS(TAB)ID25
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918