All MOSFET. IXTA2N100 Datasheet

 

IXTA2N100 Datasheet and Replacement


   Type Designator: IXTA2N100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 40 nC
   tr ⓘ - Rise Time: 800 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm
   Package: TO263
 

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IXTA2N100 Datasheet (PDF)

 ..1. Size:76K  ixys
ixta2n100 ixtp2n100.pdf pdf_icon

IXTA2N100

High Voltage VDSS = 1000 VIXTA 2N100MOSFET ID25 = 2 AIXTP 2N100RDS(on) = 7 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-220AB (IXTP)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 VD (TAB)GVGSM Transient 30 VDSID25 TC = 25C2 AIDM TC = 25C, pulse width limited by

 8.1. Size:113K  ixys
ixta2n80 ixtp2n80.pdf pdf_icon

IXTA2N100

VDSS = 800 VHigh Voltage MOSFET IXTA 2N80ID25 = 2 AIXTP 2N80 RDS(on) = 6.2 N-Channel Enhancement ModeAvalanche Energy RatedPreliminary DataSymbol Test Conditions Maximum Ratings TO-220AB (IXTP)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VVGS Continuous 20 VD (TAB)GVGSM Transient 30 VDSID25 TC = 25C2 A

 9.1. Size:198K  ixys
ixta200n075t7.pdf pdf_icon

IXTA2N100

Preliminary Technical InformationVDSS = 75 VIXTA200N075T7TrenchMVTMID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25 C to 175 C75 VVDGR TJ = 25 C to 175 C; RGS = 1 M 75 VVGSM Transient 20 V1ID25 TC = 25

 9.2. Size:214K  ixys
ixta220n055t ixtp220n055t.pdf pdf_icon

IXTA2N100

Preliminary Technical InformationIXTA220N055T VDSS = 55 VTrenchMVTMIXTP220N055T ID25 = 220 APower MOSFET RDS(on) 4.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VGVGSM Transient 20 VS(TAB)ID25 T

Datasheet: IXTA240N055T , IXTA240N055T7 , IXTA24P085T , IXTA260N055T2 , IXTA260N055T2-7 , IXTA26P10T , IXTA26P20P , IXTA28P065T , IRF540 , IXTA2N100P , IXTA2N80P , IXTA2R4N120P , IXTA300N04T2 , IXTA300N04T2-7 , IXTA32N20T , IXTA32P05T , IXTA32P20T .

Keywords - IXTA2N100 MOSFET datasheet

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