All MOSFET. IXTA32P20T Datasheet

 

IXTA32P20T MOSFET. Datasheet pdf. Equivalent

Type Designator: IXTA32P20T

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 15 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 32 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 185 nC

Rise Time (tr): 190 nS

Maximum Drain-Source On-State Resistance (Rds): 0.13 Ohm

Package: TO263

IXTA32P20T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTA32P20T Datasheet (PDF)

5.1. ixta3n100d2hv.pdf Size:184K _ixys

IXTA32P20T
IXTA32P20T

Preliminary Technical Information High Voltage VDSX = 1000V IXTA3N100D2HV Depletion Mode ID(on) > 3A MOSFET   RDS(on)    6     D N-Channel G TO-263HV S G S D (Tab) Symbol Test Conditions Maximum Ratings VDSX TJ = 25C to 150C 1000 V G = Gate D = Drain VGSX Continuous 20 V S = Source Tab = Drain VGSM Transient 30 V PD TC = 25C 1

5.2. ixta3n50p ixtp3n50p ixty3n50p.pdf Size:237K _ixys

IXTA32P20T
IXTA32P20T

IXTA 3N50P VDSS = 500 V PolarHVTM IXTP 3N50P ID25 = 3.6 A Power MOSFET ? ? IXTY 3N50P RDS(on) ? 2.0 ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V VGSS 30 V VGSM 40 V (TAB) G D S ID25 TC = 25 C 3.6 A IDM TC = 25 C, pulse width limited

 5.3. ixta3n50d2-ixtp3n50d2.pdf Size:168K _ixys

IXTA32P20T
IXTA32P20T

Depletion Mode VDSX = 500V IXTA3N50D2 MOSFET ID(on) > 3A IXTP3N50D2 ? ? RDS(on) ? 1.5? ? ? ? ? ? ? N-Channel TO-263 AA (IXTA) G Symbol Test Conditions Maximum Ratings S VDSX TJ = 25C to 150C 500 V D (Tab) VGSX Continuous 20 V VGSM Transient 30 V TO-220AB (IXTP) PD TC = 25C 125 W TJ - 55 ... +150 C TJM 150 C Tstg - 55 ... +150 C G D D (Tab) S TL 1.6mm (0.062 in.)

5.4. ixta3n120trl.pdf Size:560K _ixys

IXTA32P20T
IXTA32P20T

VDSS ID25 RDS(on) High Voltage IXTA 3N120 Ω Ω Ω Ω Power MOSFETs 1200 V 3 A 4.5 Ω IXTP 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS Continuous ±20 V D (TAB) G VGSM Transient ±30 V D S ID25 TC = 25°C3 A IDM TC =

 5.5. ixta36n30p ixtp36n30p ixtq36n30p.pdf Size:252K _ixys

IXTA32P20T
IXTA32P20T

IXTA 36N30P VDSS = 300 V PolarHTTM IXTP 36N30P ID25 = 36 A Power MOSFET ? ? IXTQ 36N30P RDS(on) ? 110 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 300 V G VDGR TJ = 25 C to 150 C; RGS = 1 M? 300 V S D(TAB) VGS Continuous 30 V VGSM Transient 40 V TO-220 (IXTP) ID25 TC = 25 C36 A ID

5.6. ixta3n120hv.pdf Size:138K _ixys

IXTA32P20T
IXTA32P20T

High Voltage VDSS = 1200V IXTA3N120HV ID25 = 3A Power MOSFET   RDS(on)  4.5       N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 Symbol Test Conditions Maximum Ratings G S VDSS TJ = 25C to 150C 1200 V VDGR TJ = 25C to 150C, RGS = 1M 1200 V D (Tab) VGSS Continuous 20 V VGSM Transient 30 V G = Gate D

5.7. ixta3n150hv.pdf Size:142K _ixys

IXTA32P20T
IXTA32P20T

Preliminary Technical Information High Voltage VDSS = 1500V IXTA3N150HV ID25 = 3A Power MOSFET ≤ Ω RDS(on) ≤ 7.3Ω ≤ Ω ≤ Ω ≤ Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 Symbol Test Conditions Maximum Ratings G S VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1500 V D (Tab) VGSS Continuous ±30 V VGSM Transi

5.8. ixta3n120 ixtp3n120.pdf Size:562K _ixys

IXTA32P20T
IXTA32P20T

VDSS ID25 RDS(on) High Voltage IXTA 3N120 ? ? ? ? Power MOSFETs 1200 V 3 A 4.5 ? IXTP 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25C to 150C 1200 V VDGR TJ = 25C to 150C; RGS = 1 M? 1200 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25C3 A IDM TC = 25C, pulse width limi

5.9. ixta3n60p ixtp3n60p ixty3n60p.pdf Size:228K _ixys

IXTA32P20T
IXTA32P20T

IXTA 3N60P VDSS = 600 V PolarHVTM IXTP 3N60P ID25 = 3.0 A Power MOSFET IXTY 3N60P ? ? RDS(on) ? 2.9 ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V VGS Continuous 30 V G S VGSM Transient 40 V (TAB) ID25 TC = 25 C 3.0 A TO-220 (IXTP)

Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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