All MOSFET. IXTA44P15T Datasheet

 

IXTA44P15T MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTA44P15T
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 298 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 44 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 175 nC
   trⓘ - Rise Time: 140 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: TO263

 IXTA44P15T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTA44P15T Datasheet (PDF)

 9.1. Size:196K  ixys
 ixta4n150hv.pdf

IXTA44P15T IXTA44P15T

Preliminary Technical InformationHigh Voltage VDSS = 1500VIXTA4N150HVID25 = 4APower MOSFETsIXTT4N150HV RDS(on) 6 N-Channel Enhancement ModeFast Intrinsic DiodeTO-263Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 1500 VSVDGR TJ = 25C to 150C, RGS = 1M 1500 VD (Tab)VGSS Continuous 30 VVGSM Transient

 9.2. Size:238K  ixys
 ixta4n65x2 ixtp4n65x2 ixty4n65x2.pdf

IXTA44P15T IXTA44P15T

Preliminary Technical InformationX2-Class VDSS = 650VIXTY4N65X2Power MOSFET ID25 = 4AIXTA4N65X2 RDS(on) 850m IXTP4N65X2N-Channel Enhancement ModeTO-252 (IXTY)G SSymbol Test Conditions Maximum Ratings D (Tab)VDSS TJ = 25C to 150C 650 VTO-263 (IXTA)VDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VG

 9.3. Size:154K  ixys
 ixta460p2-ixtp460p2-ixtq460p2-ixth460p2.pdf

IXTA44P15T IXTA44P15T

PolarP2TM VDSS = 500VIXTA460P2ID25 = 24APower MOSFETIXTP460P2 RDS(on) 270m IXTQ460P2N-Channel Enhancement Modetrr(typ) = 400nsAvalanche Rated IXTH460P2Fast Intrinsic DiodeTO-220AB (IXTP)TO-263 AA (IXTA)TO-3P (IXTQ)GGS DGD SD (Tab)D (Tab) SD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 V

 9.4. Size:313K  ixys
 ixty4n65x2 ixta4n65x2 ixtp4n65x2.pdf

IXTA44P15T IXTA44P15T

X2-Class VDSS = 650VIXTY4N65X2Power MOSFET ID25 = 4AIXTA4N65X2 RDS(on) 850m IXTP4N65X2N-Channel Enhancement ModeTO-252 (IXTY)G SSymbol Test Conditions Maximum Ratings D (Tab)VDSS TJ = 25C to 150C 650 VTO-263 (IXTA)VDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VGVGSM Transient 40 VSID25 TC

 9.5. Size:156K  ixys
 ixta460p2 ixtp460p2 ixtq460p2 ixth460p2.pdf

IXTA44P15T IXTA44P15T

PolarP2TM VDSS = 500VIXTA460P2ID25 = 24APower MOSFETIXTP460P2 RDS(on) 270m IXTQ460P2N-Channel Enhancement Modetrr(typ) = 400nsAvalanche Rated IXTH460P2Fast Intrinsic DiodeTO-220AB (IXTP)TO-263 AA (IXTA)TO-3P (IXTQ)GGS DGD SD (Tab)D (Tab) SD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 V

 9.6. Size:252K  ixys
 ixta42n25p ixtp42n25p ixtq42n25p.pdf

IXTA44P15T IXTA44P15T

IXTA 42N25P VDSS = 250 VPolarHTTMIXTP 42N25P ID25 = 42 APower MOSFET IXTQ 42N25P RDS(on) 84 m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25 C to 150 C 250 VSVDGR TJ = 25 C to 150 C; RGS = 1 M 250 V (TAB)VGS Continuous 20 VTO-220 (IXTP)VGSM Transient 3

 9.7. Size:284K  ixys
 ixty48p05t ixta48p05t ixtp48p05t.pdf

IXTA44P15T IXTA44P15T

TrenchPTM VDSS = - 50VIXTY48P05TID25 = - 48APower MOSFETIXTA48P05T RDS(on) 30m IXTP48P05TP-Channel Enhancement ModeAvalanche RatedTO-252 (IXTY)G SD (Tab)TO-263 (IXTA)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C - 50 VSVDGR TJ = 25C to 150C, RGS = 1M - 50 VD (Tab)VGSS Continuous 15

 9.8. Size:141K  ixys
 ixta4n60p ixtp4n60p ixtu4n60p ixty4n60p.pdf

IXTA44P15T IXTA44P15T

IXTA4N60P VDSS = 600 VPolarHVTMIXTP4N60P ID25 = 4 APower MOSFETIXTU4N60P RDS(on) 2.0 N-Channel Enhancement ModeIXTY4N60PAvalanche RatedTO-263 (IXTA)GSSymbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VTO-220 (IXTP)VGSS Continuous 30 VVGSM Transient 40 V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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