IXTA4N60P Datasheet. Specs and Replacement

Type Designator: IXTA4N60P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 89 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 500 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO263

IXTA4N60P substitution

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IXTA4N60P datasheet

 ..1. Size:141K  ixys
 ixta4n60p ixtp4n60p ixtu4n60p ixty4n60p.pdf pdf_icon

IXTA4N60P

IXTA4N60P VDSS = 600 V PolarHVTM IXTP4N60P ID25 = 4 A Power MOSFET IXTU4N60P RDS(on) 2.0 N-Channel Enhancement Mode IXTY4N60P Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V TO-220 (IXTP) VGSS Continuous 30 V VGSM Transient 40 V ... See More ⇒

 7.1. Size:238K  ixys
 ixta4n65x2 ixtp4n65x2 ixty4n65x2.pdf pdf_icon

IXTA4N60P

Preliminary Technical Information X2-Class VDSS = 650V IXTY4N65X2 Power MOSFET ID25 = 4A IXTA4N65X2 RDS(on) 850m IXTP4N65X2 N-Channel Enhancement Mode TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 650 V TO-263 (IXTA) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V G ... See More ⇒

 7.2. Size:313K  ixys
 ixty4n65x2 ixta4n65x2 ixtp4n65x2.pdf pdf_icon

IXTA4N60P

X2-Class VDSS = 650V IXTY4N65X2 Power MOSFET ID25 = 4A IXTA4N65X2 RDS(on) 850m IXTP4N65X2 N-Channel Enhancement Mode TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 650 V TO-263 (IXTA) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V G VGSM Transient 40 V S ID25 TC... See More ⇒

 8.1. Size:196K  ixys
 ixta4n150hv.pdf pdf_icon

IXTA4N60P

Preliminary Technical Information High Voltage VDSS = 1500V IXTA4N150HV ID25 = 4A Power MOSFETs IXTT4N150HV RDS(on) 6 N-Channel Enhancement Mode Fast Intrinsic Diode TO-263 Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 1500 V S VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V D (Tab) VGSS Continuous 30 V VGSM Transient ... See More ⇒

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Detailed specifications: IXTA3N50P, IXTA3N60P, IXTA42N15T, IXTA42N25P, IXTA44P15T, IXTA460P2, IXTA48N20T, IXTA48P05T, AON7408, IXTA4N80P, IXTA50N20P, IXTA50N25T, IXTA50N28T, IXTA52P10P, IXTA56N15T, IXTA5N50P, IXTA5N60P

Keywords - IXTA4N60P MOSFET specs

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