IXTA50N28T
MOSFET. Datasheet pdf. Equivalent
Type Designator: IXTA50N28T
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 340
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 280
V
|Id|ⓘ - Maximum Drain Current: 50
A
Qgⓘ - Total Gate Charge: 87
nC
trⓘ - Rise Time: 180
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.066
Ohm
Package:
TO263
IXTA50N28T
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXTA50N28T
Datasheet (PDF)
6.1. Size:230K ixys
ixta50n25t ixtq50n25t ixtp50n25t ixth50n25t.pdf 
IXTA50N25T IXTQ50N25TTrench Gate VDSS = 250VIXTP50N25T IXTH50N25TID25 = 50APower MOSFET RDS(on) 60m N-Channel Enhancement ModeTO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ)G GDSSGD (Tab)DD (Tab) D (Tab)STO-247 (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C, RGS = 1M
9.1. Size:120K ixys
ixta5n60p ixtp5n60p.pdf
VDSS = 600 VIXTA 5N60PPolarHVTMID25 = 5 AIXTP 5N60PPower MOSFET RDS(on) 1.7 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25C to 175C 600 VVDGR TJ = 25C to 175C; RGS = 1 M 600 VVGSS Continuous 30 VGVGSM Transient 40 VS(TAB)ID25 TC = 25C5 ATO-220 (I
9.2. Size:186K ixys
ixta52p10p ixtp52p10p ixtq52p10p ixth52p10p.pdf
PolarPTM VDSS = - 100VIXTA52P10PID25 = - 52APower MOSFETsIXTP52P10P RDS(on) 50m IXTQ52P10PP-Channel Enhancement ModeAvalanche RatedIXTH52P10PTO-3P (IXTQ)TO-263 AA (IXTA) TO-220AB (IXTP)DGGGSDG SSD (Tab)D D (Tab)S TabSymbol Test Conditions Maximum Ratings TO-247 (IXTH)VDSS TJ = 25C to 150C -100 VVDGR TJ = 2
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