IXTA50N28T Datasheet. Specs and Replacement

Type Designator: IXTA50N28T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 340 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 280 V

|Id| ⓘ - Maximum Drain Current: 50 A

Electrical Characteristics

tr ⓘ - Rise Time: 180 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.066 Ohm

Package: TO263

IXTA50N28T substitution

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IXTA50N28T datasheet

 6.1. Size:230K  ixys
 ixta50n25t ixtq50n25t ixtp50n25t ixth50n25t.pdf pdf_icon

IXTA50N28T

IXTA50N25T IXTQ50N25T Trench Gate VDSS = 250V IXTP50N25T IXTH50N25T ID25 = 50A Power MOSFET RDS(on) 60m N-Channel Enhancement Mode TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G G D S S G D (Tab) D D (Tab) D (Tab) S TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C, RGS = 1M ... See More ⇒

 9.1. Size:120K  ixys
 ixta5n60p ixtp5n60p.pdf pdf_icon

IXTA50N28T

VDSS = 600 V IXTA 5N60P PolarHVTM ID25 = 5 A IXTP 5N60P Power MOSFET RDS(on) 1.7 N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C 600 V VDGR TJ = 25 C to 175 C; RGS = 1 M 600 V VGSS Continuous 30 V G VGSM Transient 40 V S (TAB) ID25 TC = 25 C5 A TO-220 (I... See More ⇒

 9.2. Size:186K  ixys
 ixta52p10p ixtp52p10p ixtq52p10p ixth52p10p.pdf pdf_icon

IXTA50N28T

PolarPTM VDSS = - 100V IXTA52P10P ID25 = - 52A Power MOSFETs IXTP52P10P RDS(on) 50m IXTQ52P10P P-Channel Enhancement Mode Avalanche Rated IXTH52P10P TO-3P (IXTQ) TO-263 AA (IXTA) TO-220AB (IXTP) D G G G S D G S S D (Tab) D D (Tab) S Tab Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 150 C -100 V VDGR TJ = 2... See More ⇒

Detailed specifications: IXTA44P15T, IXTA460P2, IXTA48N20T, IXTA48P05T, IXTA4N60P, IXTA4N80P, IXTA50N20P, IXTA50N25T, IRF9540N, IXTA52P10P, IXTA56N15T, IXTA5N50P, IXTA5N60P, IXTA60N10T, IXTA60N20T, IXTA62N15P, IXTA6N100D2

Keywords - IXTA50N28T MOSFET specs

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