IXTA90N055T2 Datasheet. Specs and Replacement

Type Designator: IXTA90N055T2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 37 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm

Package: TO263

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IXTA90N055T2 datasheet

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IXTA90N055T2

Preliminary Technical Information IXTA90N055T VDSS = 55 V TrenchMVTM IXTP90N055T ID25 = 90 A Power MOSFET RDS(on) 8.8 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V G VGSM Transient 20 V S (TAB) ID25 TC =... See More ⇒

Detailed specifications: IXTA80N10T, IXTA80N10T7, IXTA80N12T2, IXTA86N20T, IXTA88N085T, IXTA88N085T7, IXTA8N50P, IXTA90N055T, 4N60, IXTA90N075T2, IXTA90N15T, IXTA96P085T, IXTA98N075T, IXTA98N075T7, IXTB30N100L, IXTB62N50L, IXTC110N055T

Keywords - IXTA90N055T2 MOSFET specs

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