All MOSFET. IXTA90N055T2 Datasheet

 

IXTA90N055T2 Datasheet and Replacement


   Type Designator: IXTA90N055T2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 37 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm
   Package: TO263
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IXTA90N055T2 Datasheet (PDF)

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IXTA90N055T2

Preliminary Technical InformationIXTA90N055T VDSS = 55 VTrenchMVTMIXTP90N055T ID25 = 90 APower MOSFET RDS(on) 8.8 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VGVGSM Transient 20 VS(TAB)ID25 TC =

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