All MOSFET. IXTA90N075T2 Datasheet

 

IXTA90N075T2 Datasheet and Replacement


   Type Designator: IXTA90N075T2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 50 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO263
 

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IXTA90N075T2 Datasheet (PDF)

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IXTA90N075T2

Preliminary Technical InformationIXTA90N055T VDSS = 55 VTrenchMVTMIXTP90N055T ID25 = 90 APower MOSFET RDS(on) 8.8 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VGVGSM Transient 20 VS(TAB)ID25 TC =

Datasheet: IXTA80N10T7 , IXTA80N12T2 , IXTA86N20T , IXTA88N085T , IXTA88N085T7 , IXTA8N50P , IXTA90N055T , IXTA90N055T2 , STF13NM60N , IXTA90N15T , IXTA96P085T , IXTA98N075T , IXTA98N075T7 , IXTB30N100L , IXTB62N50L , IXTC110N055T , IXTC110N25T .

History: IXTA98N075T | VBZE30N10 | VBZE100N02 | SFD070N60C2 | STS10P3LLH6 | STB140NF75-1

Keywords - IXTA90N075T2 MOSFET datasheet

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