All MOSFET. IXTA96P085T Datasheet

 

IXTA96P085T Datasheet and Replacement


   Type Designator: IXTA96P085T
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 298 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id|ⓘ - Maximum Drain Current: 96 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 55 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO263
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IXTA96P085T Datasheet (PDF)

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IXTA96P085T

Preliminary Technical InformationIXTA90N055T VDSS = 55 VTrenchMVTMIXTP90N055T ID25 = 90 APower MOSFET RDS(on) 8.8 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VGVGSM Transient 20 VS(TAB)ID25 TC =

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: APT8056BVFR | MTB30N06Q8 | SUM90N10-8M2P | IPD90N10S4L-06 | IXFH110N10P | RSE002P03TL | WSF20N20G

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