All MOSFET. IXTA96P085T Datasheet

 

IXTA96P085T Datasheet and Replacement


   Type Designator: IXTA96P085T
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 298 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 96 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO263
 

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IXTA96P085T Datasheet (PDF)

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IXTA96P085T

Preliminary Technical InformationIXTA90N055T VDSS = 55 VTrenchMVTMIXTP90N055T ID25 = 90 APower MOSFET RDS(on) 8.8 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VGVGSM Transient 20 VS(TAB)ID25 TC =

Datasheet: IXTA86N20T , IXTA88N085T , IXTA88N085T7 , IXTA8N50P , IXTA90N055T , IXTA90N055T2 , IXTA90N075T2 , IXTA90N15T , 5N65 , IXTA98N075T , IXTA98N075T7 , IXTB30N100L , IXTB62N50L , IXTC110N055T , IXTC110N25T , IXTC13N50 , IXTC160N10T .

History: SUP40N10-30 | SUM90N10-8M2P | AP3A010MT | PSMNR60-25YLH | SI4686DY | HGB014N08A | BLP10N20J-B

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