All MOSFET. IXTA96P085T Datasheet

 

IXTA96P085T MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTA96P085T
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 298 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 96 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 180 nC
   trⓘ - Rise Time: 55 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO263

 IXTA96P085T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTA96P085T Datasheet (PDF)

 9.1. Size:215K  ixys
 ixta90n055t ixtp90n055t.pdf

IXTA96P085T IXTA96P085T

Preliminary Technical InformationIXTA90N055T VDSS = 55 VTrenchMVTMIXTP90N055T ID25 = 90 APower MOSFET RDS(on) 8.8 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VGVGSM Transient 20 VS(TAB)ID25 TC =

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top