IXTA96P085T Datasheet. Specs and Replacement

Type Designator: IXTA96P085T

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 298 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 96 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: TO263

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IXTA96P085T datasheet

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IXTA96P085T

Preliminary Technical Information IXTA90N055T VDSS = 55 V TrenchMVTM IXTP90N055T ID25 = 90 A Power MOSFET RDS(on) 8.8 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V G VGSM Transient 20 V S (TAB) ID25 TC =... See More ⇒

Detailed specifications: IXTA86N20T, IXTA88N085T, IXTA88N085T7, IXTA8N50P, IXTA90N055T, IXTA90N055T2, IXTA90N075T2, IXTA90N15T, 2SK3568, IXTA98N075T, IXTA98N075T7, IXTB30N100L, IXTB62N50L, IXTC110N055T, IXTC110N25T, IXTC13N50, IXTC160N10T

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