IXTB30N100L Datasheet. Specs and Replacement

Type Designator: IXTB30N100L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 800 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1000 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm

Package: PLUS264

IXTB30N100L substitution

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IXTB30N100L datasheet

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Detailed specifications: IXTA8N50P, IXTA90N055T, IXTA90N055T2, IXTA90N075T2, IXTA90N15T, IXTA96P085T, IXTA98N075T, IXTA98N075T7, RFP50N06, IXTB62N50L, IXTC110N055T, IXTC110N25T, IXTC13N50, IXTC160N10T, IXTC180N085T, IXTC180N10T, IXTC200N075T

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