IXTB30N100L Datasheet and Replacement
Type Designator: IXTB30N100L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 800 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 1000 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: PLUS264
IXTB30N100L substitution
IXTB30N100L Datasheet (PDF)
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Datasheet: IXTA8N50P , IXTA90N055T , IXTA90N055T2 , IXTA90N075T2 , IXTA90N15T , IXTA96P085T , IXTA98N075T , IXTA98N075T7 , SKD502T , IXTB62N50L , IXTC110N055T , IXTC110N25T , IXTC13N50 , IXTC160N10T , IXTC180N085T , IXTC180N10T , IXTC200N075T .
History: IRFSL3107PBF | AON6206
Keywords - IXTB30N100L MOSFET datasheet
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History: IRFSL3107PBF | AON6206
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