IXTB30N100L Datasheet and Replacement

   Type Designator: IXTB30N100L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 800 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 545 nC
   trⓘ - Rise Time: 1000 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: PLUS264
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