All MOSFET. IXTC110N055T Datasheet

 

IXTC110N055T Datasheet and Replacement


   Type Designator: IXTC110N055T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Id| ⓘ - Maximum Drain Current: 78 A
   tr ⓘ - Rise Time: 70 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: ISOPLUS220
 

 IXTC110N055T substitution

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IXTC110N055T Datasheet (PDF)

 6.1. Size:186K  ixys
 ixtc110n25t.pdf pdf_icon

IXTC110N055T

Trench Gate VDSS = 250VIXTC110N25TPower MOSFET ID25 = 50A RDS(on) 27m (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedISOPLUS220 (IXTC)Symbol Test Conditions Maximum Ratings E153432VDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C, RGS = 1M 250 VVGSS Continuous 20 VGVGSM Transient 30 VD

 9.1. Size:187K  ixys
 ixtc160n10t.pdf pdf_icon

IXTC110N055T

Preliminary Technical InformationIXTC160N10T VDSS = 100 VTrenchMVTMID25 = 83 APower MOSFET RDS(on) 7.5 m (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum Ratings ISOPLUS220 (IXTC)E153432VDSS TJ = 25C to 175C 100 VVDGR TJ = 25C to 175C; RGS = 1 M 100 VVGSM Transient

Datasheet: IXTA90N055T2 , IXTA90N075T2 , IXTA90N15T , IXTA96P085T , IXTA98N075T , IXTA98N075T7 , IXTB30N100L , IXTB62N50L , 7N60 , IXTC110N25T , IXTC13N50 , IXTC160N10T , IXTC180N085T , IXTC180N10T , IXTC200N075T , IXTC200N085T , IXTC200N10T .

History: RSS070P05 | KI5441DC

Keywords - IXTC110N055T MOSFET datasheet

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