IXTC160N10T Datasheet. Specs and Replacement

Type Designator: IXTC160N10T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 140 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 83 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: ISOPLUS220

IXTC160N10T substitution

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IXTC160N10T datasheet

 ..1. Size:187K  ixys
 ixtc160n10t.pdf pdf_icon

IXTC160N10T

Preliminary Technical Information IXTC160N10T VDSS = 100 V TrenchMVTM ID25 = 83 A Power MOSFET RDS(on) 7.5 m (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220 (IXTC) E153432 VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGSM Transient ... See More ⇒

 9.1. Size:186K  ixys
 ixtc110n25t.pdf pdf_icon

IXTC160N10T

Trench Gate VDSS = 250V IXTC110N25T Power MOSFET ID25 = 50A RDS(on) 27m (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated ISOPLUS220 (IXTC) Symbol Test Conditions Maximum Ratings E153432 VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C, RGS = 1M 250 V VGSS Continuous 20 V G VGSM Transient 30 V D ... See More ⇒

Detailed specifications: IXTA96P085T, IXTA98N075T, IXTA98N075T7, IXTB30N100L, IXTB62N50L, IXTC110N055T, IXTC110N25T, IXTC13N50, IRF520, IXTC180N085T, IXTC180N10T, IXTC200N075T, IXTC200N085T, IXTC200N10T, IXTC220N055T, IXTC220N075T, IXTC230N085T

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