All MOSFET. IXTC180N10T Datasheet

 

IXTC180N10T Datasheet and Replacement


   Type Designator: IXTC180N10T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   tr ⓘ - Rise Time: 100 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: ISOPLUS220
 

 IXTC180N10T substitution

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IXTC180N10T Datasheet (PDF)

 9.1. Size:186K  ixys
 ixtc110n25t.pdf pdf_icon

IXTC180N10T

Trench Gate VDSS = 250VIXTC110N25TPower MOSFET ID25 = 50A RDS(on) 27m (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedISOPLUS220 (IXTC)Symbol Test Conditions Maximum Ratings E153432VDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C, RGS = 1M 250 VVGSS Continuous 20 VGVGSM Transient 30 VD

 9.2. Size:187K  ixys
 ixtc160n10t.pdf pdf_icon

IXTC180N10T

Preliminary Technical InformationIXTC160N10T VDSS = 100 VTrenchMVTMID25 = 83 APower MOSFET RDS(on) 7.5 m (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum Ratings ISOPLUS220 (IXTC)E153432VDSS TJ = 25C to 175C 100 VVDGR TJ = 25C to 175C; RGS = 1 M 100 VVGSM Transient

Datasheet: IXTA98N075T7 , IXTB30N100L , IXTB62N50L , IXTC110N055T , IXTC110N25T , IXTC13N50 , IXTC160N10T , IXTC180N085T , IRF2807 , IXTC200N075T , IXTC200N085T , IXTC200N10T , IXTC220N055T , IXTC220N075T , IXTC230N085T , IXTC240N055T , IXTC250N075T .

History: AOB256L | EM6K7 | DMP6110SSD | KI2300 | OSG70R750PF | APTC60DAM18CTG | HUFA75829D3S

Keywords - IXTC180N10T MOSFET datasheet

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