All MOSFET. IXTC240N055T Datasheet

 

IXTC240N055T Datasheet and Replacement


   Type Designator: IXTC240N055T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 132 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 30 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: ISOPLUS220
 

 IXTC240N055T substitution

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IXTC240N055T Datasheet (PDF)

 ..1. Size:187K  ixys
 ixtc240n055t.pdf pdf_icon

IXTC240N055T

Preliminary Technical InformationIXTC240N055T VDSS = 55 VTrenchMVTMID25 = 132 APower MOSFET RDS(on) 4.0 m (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS240 (IXTC)E153432VDSS TJ = 25C to 175C55 VVDGR TJ = 25C to 175C; RGS = 1 M 55 VVGSM Transient

 9.1. Size:175K  ixys
 ixtc26n50p.pdf pdf_icon

IXTC240N055T

IXTC 26N50P VDSS = 500 VPolarHVTMID25 = 15 APower MOSFET RDS(on) 260 m ISOPLUS220TM(Electrically Isolated Tab)N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 500 V ISOPLUS220TM (IXTC)E153432VDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGS Continuous 30 VVGSM Transi

 9.2. Size:186K  ixys
 ixtc280n055t.pdf pdf_icon

IXTC240N055T

Preliminary Technical InformationIXTC280N055T VDSS = 55 VTrenchMVTMID25 = 145 APower MOSFET RDS(on) 3.6 m (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS220 (IXTC)E153432VDSS TJ = 25C to 175C55 VVDGR TJ = 25C to 175C; RGS = 1 M 55 VVGSM Transient

 9.3. Size:187K  ixys
 ixtc220n055t.pdf pdf_icon

IXTC240N055T

Preliminary Technical InformationIXTC220N055T VDSS = 55 VTrenchMVTMID25 = 130 APower MOSFET RDS(on) 4.4 m (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS220 (IXTC)E153432VDSS TJ = 25C to 175C55 VVDGR TJ = 25C to 175C; RGS = 1 M 55 VVGSM Transient

SHOW MORE

Datasheet: IXTC180N085T , IXTC180N10T , IXTC200N075T , IXTC200N085T , IXTC200N10T , IXTC220N055T , IXTC220N075T , IXTC230N085T , IRFB31N20D , IXTC250N075T , IXTC26N50P , IXTC280N055T , IXTC36P15P , IXTC62N15P , IXTC75N10 , IXTC96N25T , IXTD110N25T-8W .

History: NTBS9D0N10MC | FQNL1N50BBU

Keywords - IXTC240N055T MOSFET datasheet

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 IXTC240N055T equivalent finder
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