IXTC96N25T Datasheet and Replacement

   Type Designator: IXTC96N25T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Qg ⓘ - Total Gate Charge: 114 nC
   tr ⓘ - Rise Time: 158 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
   Package: ISOPLUSS220
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