IXTF03N400 Datasheet. Specs and Replacement

Type Designator: IXTF03N400

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 4000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.8 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 300 Ohm

Package: ISOPLUS I4PAK

IXTF03N400 substitution

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IXTF03N400 datasheet

 ..1. Size:149K  ixys
 ixtf03n400.pdf pdf_icon

IXTF03N400

Advance Technical Information High Voltage VDSS = 4000V IXTF03N400 Power MOSFET ID25 = 300mA RDS(on) 300 ( Electrically Isolated Tab) N-Channel Enhancement Mode ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 4000 V VDGR TJ = 25 C to 150 C, RGS = 1M 4000 V 1 VGSS Continuous 20 V 2 5 Isolated Tab VGSM T... See More ⇒

 9.1. Size:154K  ixys
 ixtf02n450.pdf pdf_icon

IXTF03N400

Advance Technical Information High Voltage VDSS = 4500V IXTF02N450 Power MOSFET ID25 = 200mA RDS(on) 750 (Electrically Isolated Tab) ISOPLUS i4-PakTM N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings 1 2 Isolated Tab VDSS TJ = 25 C to 150 C 4500 V 5 VDGR TJ = 25 C to 150 C, RGS = 1M 4500 V VGSS Continuous 20 V 1 = Ga... See More ⇒

Detailed specifications: IXTC26N50P, IXTC280N055T, IXTC36P15P, IXTC62N15P, IXTC75N10, IXTC96N25T, IXTD110N25T-8W, IXTE250N10, AON7403, IXTF1N250, IXTF1N400, IXTF200N10T, IXTF230N085T, IXTF250N075T, IXTF280N055T, IXTH02N250, IXTH03N400

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