All MOSFET. IXTF03N400 Datasheet

 

IXTF03N400 Datasheet and Replacement


   Type Designator: IXTF03N400
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 4000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 0.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 16.3 nC
   tr ⓘ - Rise Time: 2.8 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 300 Ohm
   Package: ISOPLUS I4PAK
 

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IXTF03N400 Datasheet (PDF)

 ..1. Size:149K  ixys
 ixtf03n400.pdf pdf_icon

IXTF03N400

Advance Technical InformationHigh Voltage VDSS = 4000VIXTF03N400Power MOSFETID25 = 300mA RDS(on) 300 ( Electrically Isolated Tab)N-Channel Enhancement ModeISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 4000 VVDGR TJ = 25C to 150C, RGS = 1M 4000 V1VGSS Continuous 20 V25 Isolated TabVGSM T

 9.1. Size:154K  ixys
 ixtf02n450.pdf pdf_icon

IXTF03N400

Advance Technical InformationHigh Voltage VDSS = 4500VIXTF02N450Power MOSFETID25 = 200mA RDS(on) 750 (Electrically Isolated Tab)ISOPLUS i4-PakTMN-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings12Isolated TabVDSS TJ = 25C to 150C 4500 V5VDGR TJ = 25C to 150C, RGS = 1M 4500 VVGSS Continuous 20 V1 = Ga

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History: FSJ9160R

Keywords - IXTF03N400 MOSFET datasheet

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