All MOSFET. IXTF1N250 Datasheet

 

IXTF1N250 Datasheet and Replacement


   Type Designator: IXTF1N250
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 2500 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Qg ⓘ - Total Gate Charge: 41 nC
   tr ⓘ - Rise Time: 2.5 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 40 Ohm
   Package: ISOPLUS I4PAK
 

 IXTF1N250 substitution

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IXTF1N250 Datasheet (PDF)

 8.1. Size:151K  ixys
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IXTF1N250

Advance Technical InformationHigh Voltage VDSS = 4500VIXTF1N450Power MOSFETID25 = 0.9A RDS(on) 85 (Electrically Isolated Tab)ISOPLUS i4-PakTMN-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings12Isolated TabVDSS TJ = 25C to 150C 4500 V5VDGR TJ = 25C to 150C, RGS = 1M 4500 VVGSS Continuous 20 V1 = Gate

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