All MOSFET. IXTF1N250 Datasheet

 

IXTF1N250 Datasheet and Replacement


   Type Designator: IXTF1N250
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 2500 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   trⓘ - Rise Time: 2.5 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 40 Ohm
   Package: ISOPLUS I4PAK
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IXTF1N250 Datasheet (PDF)

 8.1. Size:151K  ixys
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IXTF1N250

Advance Technical InformationHigh Voltage VDSS = 4500VIXTF1N450Power MOSFETID25 = 0.9A RDS(on) 85 (Electrically Isolated Tab)ISOPLUS i4-PakTMN-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings12Isolated TabVDSS TJ = 25C to 150C 4500 V5VDGR TJ = 25C to 150C, RGS = 1M 4500 VVGSS Continuous 20 V1 = Gate

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2SK3192 | FQD4N25TM

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