IXTF1N250 Datasheet. Specs and Replacement

Type Designator: IXTF1N250

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 2500 V

|Id| ⓘ - Maximum Drain Current: 1 A

Electrical Characteristics

tr ⓘ - Rise Time: 2.5 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 40 Ohm

Package: ISOPLUS I4PAK

IXTF1N250 substitution

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IXTF1N250 datasheet

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IXTF1N250

Advance Technical Information High Voltage VDSS = 4500V IXTF1N450 Power MOSFET ID25 = 0.9A RDS(on) 85 (Electrically Isolated Tab) ISOPLUS i4-PakTM N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings 1 2 Isolated Tab VDSS TJ = 25 C to 150 C 4500 V 5 VDGR TJ = 25 C to 150 C, RGS = 1M 4500 V VGSS Continuous 20 V 1 = Gate ... See More ⇒

Detailed specifications: IXTC280N055T, IXTC36P15P, IXTC62N15P, IXTC75N10, IXTC96N25T, IXTD110N25T-8W, IXTE250N10, IXTF03N400, K2611, IXTF1N400, IXTF200N10T, IXTF230N085T, IXTF250N075T, IXTF280N055T, IXTH02N250, IXTH03N400, IXTH102N15T

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