All MOSFET. IXTH02N250 Datasheet

 

IXTH02N250 Datasheet and Replacement


   Type Designator: IXTH02N250
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 57 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 2500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 0.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 7.4 nC
   tr ⓘ - Rise Time: 1500 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 450 Ohm
   Package: TO247
 

 IXTH02N250 substitution

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IXTH02N250 Datasheet (PDF)

 ..1. Size:194K  ixys
 ixth02n250 ixtv02n250s.pdf pdf_icon

IXTH02N250

High VoltageIXTH02N250VDSS = 2500VPower MOSFETsID25 = 200mA IXTV02N250S RDS(on) 450 N-Channel Enhancement ModeFast Intrinsic DiodeTO-247 (IXTH)GD D (Tab)SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 2500 VPLUS220SMD (IXTV_S)VDGR TJ = 25C to 150C, RGS = 1M 2500 VVGSS Continuous 20 VVGSM Transient

 7.1. Size:208K  ixys
 ixth02n450hv.pdf pdf_icon

IXTH02N250

High Voltage VDSS = 4500VIXTT02N450HVPower MOSFETID25 = 200mAIXTH02N450HV RDS(on) 625 TO-268HV (IXTT)N-Channel Enhancement ModeGS D (Tab)TO-247HV (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 4500 VVDGR TJ = 25C to 150C, RGS = 1M 4500 VVGSS Continuous 20 VVGSM Transient

 9.1. Size:160K  ixys
 ixth04n300p3hv.pdf pdf_icon

IXTH02N250

Advance Technical InformationHigh Voltage VDSS = 3000VIXTH04N300P3HVPower MOSFETID25 = 0.40A RDS(on) 190 N-Channel Enhancement ModeTO-247HVSymbol Test Conditions Maximum RatingsGSVDSS TJ = 25C to 150C 3000 V D (Tab)DVDGR TJ = 25C to 150C, RGS = 1M 3000 VVGSS Continuous 20 VG = Gate D = Drai

 9.2. Size:160K  ixys
 ixth05n250p3hv.pdf pdf_icon

IXTH02N250

Advance Technical InformationHigh Voltage VDSS = 2500VIXTH05N250P3HVPower MOSFETID25 = 0.50A RDS(on) 110 N-Channel Enhancement ModeTO-247HVSymbol Test Conditions Maximum RatingsGSVDSS TJ = 25C to 150C 2500 V D (Tab)DVDGR TJ = 25C to 150C, RGS = 1M 2500 VVGSS Continuous 20 VG = Gate D = Drai

SHOW MORE

Datasheet: IXTE250N10 , IXTF03N400 , IXTF1N250 , IXTF1N400 , IXTF200N10T , IXTF230N085T , IXTF250N075T , IXTF280N055T , AO4468 , IXTH03N400 , IXTH102N15T , IXTH102N20T , IXTH10N100D , IXTH10N100D2 , IXTH10P50P , IXTH10P60 , IXTH110N10L2 .

Keywords - IXTH02N250 MOSFET datasheet

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