Справочник MOSFET. IXTH02N250

 

IXTH02N250 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IXTH02N250
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 57 W
   Предельно допустимое напряжение сток-исток |Uds|: 2500 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4.5 V
   Максимально допустимый постоянный ток стока |Id|: 0.2 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 7.4 nC
   Время нарастания (tr): 1500 ns
   Сопротивление сток-исток открытого транзистора (Rds): 450 Ohm
   Тип корпуса: TO247

 Аналог (замена) для IXTH02N250

 

 

IXTH02N250 Datasheet (PDF)

 ..1. Size:194K  ixys
 ixth02n250 ixtv02n250s.pdf

IXTH02N250 IXTH02N250

High VoltageIXTH02N250VDSS = 2500VPower MOSFETsID25 = 200mA IXTV02N250S RDS(on) 450 N-Channel Enhancement ModeFast Intrinsic DiodeTO-247 (IXTH)GD D (Tab)SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 2500 VPLUS220SMD (IXTV_S)VDGR TJ = 25C to 150C, RGS = 1M 2500 VVGSS Continuous 20 VVGSM Transient

 7.1. Size:208K  ixys
 ixth02n450hv.pdf

IXTH02N250 IXTH02N250

High Voltage VDSS = 4500VIXTT02N450HVPower MOSFETID25 = 200mAIXTH02N450HV RDS(on) 625 TO-268HV (IXTT)N-Channel Enhancement ModeGS D (Tab)TO-247HV (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 4500 VVDGR TJ = 25C to 150C, RGS = 1M 4500 VVGSS Continuous 20 VVGSM Transient

 9.1. Size:160K  ixys
 ixth04n300p3hv.pdf

IXTH02N250 IXTH02N250

Advance Technical InformationHigh Voltage VDSS = 3000VIXTH04N300P3HVPower MOSFETID25 = 0.40A RDS(on) 190 N-Channel Enhancement ModeTO-247HVSymbol Test Conditions Maximum RatingsGSVDSS TJ = 25C to 150C 3000 V D (Tab)DVDGR TJ = 25C to 150C, RGS = 1M 3000 VVGSS Continuous 20 VG = Gate D = Drai

 9.2. Size:160K  ixys
 ixth05n250p3hv.pdf

IXTH02N250 IXTH02N250

Advance Technical InformationHigh Voltage VDSS = 2500VIXTH05N250P3HVPower MOSFETID25 = 0.50A RDS(on) 110 N-Channel Enhancement ModeTO-247HVSymbol Test Conditions Maximum RatingsGSVDSS TJ = 25C to 150C 2500 V D (Tab)DVDGR TJ = 25C to 150C, RGS = 1M 2500 VVGSS Continuous 20 VG = Gate D = Drai

 9.3. Size:161K  ixys
 ixth06n220p3hv.pdf

IXTH02N250 IXTH02N250

Advance Technical InformationHigh Voltage VDSS = 2200VIXTH06N220P3HVPower MOSFETID25 = 0.60A RDS(on) 80 N-Channel Enhancement ModeTO-247HVSymbol Test Conditions Maximum RatingsGSVDSS TJ = 25C to 150C 2200 V D (Tab)DVDGR TJ = 25C to 150C, RGS = 1M 2200 VVGSS Continuous 20 VG = Gate D = Drain

 9.4. Size:186K  ixys
 ixth03n400 ixtv03n400s.pdf

IXTH02N250 IXTH02N250

Advance Technical InformationHigh Voltage VDSS = 4000VIXTH03N400ID25 = 300mAPower MOSFET IXTV03N400S RDS(on) 290 N-Channel Enhancement ModeAvalanche RatedTO-247 (IXTH)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 4000 VDD (Tab)SVDGR TJ = 25C to 150C, RGS = 1M 4000 VVGSS Continuous 20 VVGSM Transie

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