IXTH12N140 MOSFET. Datasheet pdf. Equivalent

   Type Designator: IXTH12N140
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 890 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1400 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Qgⓘ - Total Gate Charge: 106 nC
   trⓘ - Rise Time: 1200 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO247

IXTH12N140 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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