IXTH12N140 datasheet, аналоги, основные параметры

Наименование производителя: IXTH12N140

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 890 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 1400 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A

Электрические характеристики

tr ⓘ - Время нарастания: 1200 ns

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 2 Ohm

Тип корпуса: TO247

Аналог (замена) для IXTH12N140

- подборⓘ MOSFET транзистора по параметрам

 

IXTH12N140 даташит

 6.1. Size:175K  ixys
 ixtt12n150 ixth12n150.pdf pdf_icon

IXTH12N140

High Voltage VDSS = 1500V IXTT12N150 ID25 = 12A Power MOSFET IXTH12N150 RDS(on) 2.2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 1500 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V VGSS Continuous 30 V TO-247 (IXTH) VG

 6.2. Size:105K  ixys
 ixth10n100 ixtm10n100 ixth12n100 ixtm12n100.pdf pdf_icon

IXTH12N140

VDSS ID25 RDS(on) MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C 10N

 6.3. Size:122K  ixys
 ixth12n150 ixtt12n150.pdf pdf_icon

IXTH12N140

High Voltage VDSS = 1500V IXTT12N150 ID25 = 12A Power MOSFETs IXTH12N150 RDS(on) 2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 1500 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V VGSS Continuous 30 V TO-247 (IXTH) VGSM Transient

 6.4. Size:545K  ixys
 ixth12n120.pdf pdf_icon

IXTH12N140

VDSS = 1200 V IXTH 12N120 ID (cont) = 12 A Power MOSFET, Avalanche Rated RDS(on)= 1.4 High Voltage Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1200 V VGS Continuous 30 V D (TAB) VGSM Transient 40 V ID25 TC = 25 C12 A IDM TC = 25 C, pulse width limit

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... IXTH10P50P, IXTH10P60, IXTH110N10L2, IXTH110N25T, IXTH120P065T, IXTH12N100L, IXTH12N100Q, IXTH12N120, IRF640, IXTH130N10T, IXTH130N15T, IXTH130N20T, IXTH140P05T, IXTH150N17T, IXTH152N085T, IXTH15N50L2, IXTH160N075T