Справочник MOSFET. IXTH12N140

 

IXTH12N140 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IXTH12N140
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 890 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1400 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Qg ⓘ - Общий заряд затвора: 106 nC
   tr ⓘ - Время нарастания: 1200 ns
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2 Ohm
   Тип корпуса: TO247
 

 Аналог (замена) для IXTH12N140

   - подбор ⓘ MOSFET транзистора по параметрам

 

IXTH12N140 Datasheet (PDF)

 6.1. Size:175K  ixys
ixtt12n150 ixth12n150.pdfpdf_icon

IXTH12N140

High Voltage VDSS = 1500VIXTT12N150ID25 = 12APower MOSFETIXTH12N150 RDS(on) 2.2 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-268 (IXTT)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VVGSS Continuous 30 VTO-247 (IXTH)VG

 6.2. Size:105K  ixys
ixth10n100 ixtm10n100 ixth12n100 ixtm12n100.pdfpdf_icon

IXTH12N140

VDSS ID25 RDS(on)MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C 10N

 6.3. Size:122K  ixys
ixth12n150 ixtt12n150.pdfpdf_icon

IXTH12N140

High Voltage VDSS = 1500VIXTT12N150ID25 = 12APower MOSFETsIXTH12N150 RDS(on) 2 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-268 (IXTT)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VVGSS Continuous 30 VTO-247 (IXTH)VGSM Transient

 6.4. Size:545K  ixys
ixth12n120.pdfpdf_icon

IXTH12N140

VDSS = 1200 VIXTH 12N120ID (cont) = 12 APower MOSFET, Avalanche Rated RDS(on)= 1.4 High VoltagePreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 ADVDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C; RGS = 1 M 1200 VVGS Continuous 30 VD (TAB)VGSM Transient 40 VID25 TC = 25C12 AIDM TC = 25C, pulse width limit

Другие MOSFET... IXTH10P50P , IXTH10P60 , IXTH110N10L2 , IXTH110N25T , IXTH120P065T , IXTH12N100L , IXTH12N100Q , IXTH12N120 , IRFP460 , IXTH130N10T , IXTH130N15T , IXTH130N20T , IXTH140P05T , IXTH150N17T , IXTH152N085T , IXTH15N50L2 , IXTH160N075T .

 

 
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