IXTH130N20T Datasheet. Specs and Replacement

Type Designator: IXTH130N20T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 830 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 130 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO247

IXTH130N20T substitution

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IXTH130N20T datasheet

 ..1. Size:126K  ixys
 ixth130n20t.pdf pdf_icon

IXTH130N20T

Preliminary Technical Information IXTH130N20T VDSS = 200V TrenchHVTM ID25 = 130A Power MOSFET RDS(on) 16m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 VDSS TJ = 25 C to 175 C 200 V VDGR TJ = 25 C to 175 C; RGS = 1M 200 V VGSM Transient 30 V ID25 TC = 25 C 130 A ILRMS Lead Current Limit, RMS... See More ⇒

 6.1. Size:142K  ixys
 ixth130n10t ixtq130n10t.pdf pdf_icon

IXTH130N20T

VDSS = 100V IXTH130N10T TrenchMVTM ID25 = 130A IXTQ130N10T Power MOSFET RDS(on) 9.1m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C 100 V D (TAB) S VDGR TJ = 25 C to 175 C, RGS = 1M 100 V VGSM Transient 20 V TO-3P (IXTQ) ID25 TC = 25 C 130 A ILRMS Lead C... See More ⇒

 6.2. Size:260K  inchange semiconductor
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IXTH130N20T

isc N-Channel MOSFET Transistor IXTH130N10T FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V G... See More ⇒

 8.1. Size:98K  ixys
 ixth11n80 ixtm11n80 ixth13n80 ixtm13n80.pdf pdf_icon

IXTH130N20T

VDSS ID25 RDS(on) IXTH / IXTM 11N80 800 V 11 A 0.95 MegaMOSTMFET IXTH / IXTM 13N80 800 V 13 A 0.80 N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V D (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 11N80 11... See More ⇒

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Detailed specifications: IXTH110N25T, IXTH120P065T, IXTH12N100L, IXTH12N100Q, IXTH12N120, IXTH12N140, IXTH130N10T, IXTH130N15T, IRFB4110, IXTH140P05T, IXTH150N17T, IXTH152N085T, IXTH15N50L2, IXTH160N075T, IXTH160N10T, IXTH160N15T, IXTH16N10D2

Keywords - IXTH130N20T MOSFET specs

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