IXTH152N085T Datasheet: MOSFET, N-Ch, 85V, 152A. Full specification with pinout and replacement list

IXTH152N085T Datasheet. Specs and Replacement

Type Designator: IXTH152N085T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 360 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 152 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: TO247

IXTH152N085T substitution

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IXTH152N085T datasheet

..1. Size:184K ixys
ixth152n085t ixtq152n085t.pdf pdf_icon

Preliminary Technical Information IXTH152N085T VDSS = 85 V TrenchMVTM IXTQ152N085T ID25 = 152 A Power MOSFET RDS(on) 7.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V VGSM Transient 20 V ID25 TC = 25 C 152 A ILRMS L... See More ⇒

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8.2. Size:148K ixys
ixth15n70.pdf pdf_icon

IXTH15N70 PCB 24 IXTH 15N70 VDSS = 700 V MegaMOSTMFET ID (cont) = 15 A RDS(on) = 0.45 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 700 V VDGR TJ = 25 C to 150 C; RGS = 1 M 700 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 T... See More ⇒

8.3. Size:316K ixys
ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf pdf_icon

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